The potential of ion beam techniques for the development of indium nitride

Heiko Timmers; Santosh K. Shrestha; Aidan P. Byrne

doi:10.1016/j.jcrysgro.2004.05.033

The potential of ion beam techniques for the development of indium nitride

Heiko Timmers^*, Santosh K. Shrestha, Aidan P. Byrne

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

16 Citations (Scopus)

Abstract

Several types of indium nitride films presently available have been studied with ion beam techniques including Elastic Recoil Detection (ERD) analysis and radioisotope implantation combined with Perturbed Angular Correlation spectroscopy. Severe beam-induced effusion of nitrogen during ERD analysis can successfully be modelled and accurate compositional information is obtained. All types of films analysed are nitrogen-rich. Perturbed Angular Correlation spectroscopy has been demonstrated to be able to detect indium clustering in indium nitride. Indium nitride is extremely sensitive to irradiation with heavy ions both at keV- and MeV-energies. For keV-energies heavy ion fluences of the order of 10¹⁴cm^-2 can be expected to result in dissociation and significant nitrogen loss.

Original language	English
Pages (from-to)	50-58
Number of pages	9
Journal	Journal of Crystal Growth
Volume	269
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.05.033
Publication status	Published - 15 Aug 2004
Event	Proceedings of the First ONR International Indium Nitride Work - Fremantle, Australia Duration: 16 Nov 2003 → 20 Nov 2003

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10.1016/j.jcrysgro.2004.05.033

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@article{e6610889cf2e44b79449bce88b9b4f8c,

title = "The potential of ion beam techniques for the development of indium nitride",

abstract = "Several types of indium nitride films presently available have been studied with ion beam techniques including Elastic Recoil Detection (ERD) analysis and radioisotope implantation combined with Perturbed Angular Correlation spectroscopy. Severe beam-induced effusion of nitrogen during ERD analysis can successfully be modelled and accurate compositional information is obtained. All types of films analysed are nitrogen-rich. Perturbed Angular Correlation spectroscopy has been demonstrated to be able to detect indium clustering in indium nitride. Indium nitride is extremely sensitive to irradiation with heavy ions both at keV- and MeV-energies. For keV-energies heavy ion fluences of the order of 1014cm-2 can be expected to result in dissociation and significant nitrogen loss.",

keywords = "A1. Characterization, A1. Composition, A1. Ion beam analysis, A1. Irradiation, B1. Indium nitride, B2. Semiconducting III-V materials",

author = "Heiko Timmers and Shrestha, {Santosh K.} and Byrne, {Aidan P.}",

year = "2004",

month = aug,

day = "15",

doi = "10.1016/j.jcrysgro.2004.05.033",

language = "English",

volume = "269",

pages = "50--58",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedings of the First ONR International Indium Nitride Work ; Conference date: 16-11-2003 Through 20-11-2003",

}

TY - JOUR

T1 - The potential of ion beam techniques for the development of indium nitride

AU - Timmers, Heiko

AU - Shrestha, Santosh K.

AU - Byrne, Aidan P.

PY - 2004/8/15

Y1 - 2004/8/15

N2 - Several types of indium nitride films presently available have been studied with ion beam techniques including Elastic Recoil Detection (ERD) analysis and radioisotope implantation combined with Perturbed Angular Correlation spectroscopy. Severe beam-induced effusion of nitrogen during ERD analysis can successfully be modelled and accurate compositional information is obtained. All types of films analysed are nitrogen-rich. Perturbed Angular Correlation spectroscopy has been demonstrated to be able to detect indium clustering in indium nitride. Indium nitride is extremely sensitive to irradiation with heavy ions both at keV- and MeV-energies. For keV-energies heavy ion fluences of the order of 1014cm-2 can be expected to result in dissociation and significant nitrogen loss.

AB - Several types of indium nitride films presently available have been studied with ion beam techniques including Elastic Recoil Detection (ERD) analysis and radioisotope implantation combined with Perturbed Angular Correlation spectroscopy. Severe beam-induced effusion of nitrogen during ERD analysis can successfully be modelled and accurate compositional information is obtained. All types of films analysed are nitrogen-rich. Perturbed Angular Correlation spectroscopy has been demonstrated to be able to detect indium clustering in indium nitride. Indium nitride is extremely sensitive to irradiation with heavy ions both at keV- and MeV-energies. For keV-energies heavy ion fluences of the order of 1014cm-2 can be expected to result in dissociation and significant nitrogen loss.

KW - A1. Characterization

KW - A1. Composition

KW - A1. Ion beam analysis

KW - A1. Irradiation

KW - B1. Indium nitride

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=3342879465&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.05.033

DO - 10.1016/j.jcrysgro.2004.05.033

M3 - Conference article

SN - 0022-0248

VL - 269

SP - 50

EP - 58

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

T2 - Proceedings of the First ONR International Indium Nitride Work

Y2 - 16 November 2003 through 20 November 2003

ER -

The potential of ion beam techniques for the development of indium nitride

Abstract

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