@inproceedings{a924bb3ff1004dcea04ac03aead3dc3c,
title = "The properties of GaN films grown by plasma assisted laser-induced chemical vapour deposition, and the influence of heavy ion irradiation",
abstract = "GaN has been grown by plasma assisted laser-induced chemical vapour deposition on sapphire and silicon substrates. The optical and morphological properties of the films are described. The films as grown exhibit a high resistivity. The stoichiometry of the films was determined with elastic recoil detection using 200 MeV Au ions as incident beam. Sample modifications induced by the Au beam have been found to increase conductivity. Similar changes occurred when the films were exposed to ultraviolet light.",
keywords = "Chemical lasers, Chemical vapor deposition, Conductivity, Gallium nitride, Gold, Optical films, Particle beam optics, Plasma chemistry, Plasma properties, Silicon",
author = "A. Afifuddin and Butcher, {K. S.A.} and Tansley, {T. L.} and H. Timmers and Elliman, {R. G.} and Weijers, {T. D.M.} and Ophel, {T. R.}",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 11th International Semiconducting and Insulating Materials Conference, SIMC 2000 ; Conference date: 03-07-2000 Through 07-07-2000",
year = "2000",
doi = "10.1109/SIM.2000.939196",
language = "English",
series = "IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "51--54",
editor = "Welham, {N. J.} and C. Jagadish",
booktitle = "2000 International Semiconducting and Insulating Materials Conference, SIMC 2000",
address = "United States",
}