The role of Fe on the crystallisation of α-Si3N4 from amorphous Si-N formed by ion implantation

Z. L. Li; J. Wong-Leung; P. N.K. Deenapanray; M. Conway; D. J. Chivers; J. D. Fitz Gerald; J. S. Williams

doi:10.1016/S0168-583X(98)00815-5

The role of Fe on the crystallisation of α-Si₃N₄ from amorphous Si-N formed by ion implantation

Z. L. Li, J. Wong-Leung, P. N.K. Deenapanray, M. Conway, D. J. Chivers, J. D. Fitz Gerald, J. S. Williams^*

^*Corresponding author for this work

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6 Citations (Scopus)

Abstract

Ion implantation into Si has been used to produce near-surface, amorphous Si-N layers with the nitrogen content both below and exceeding Si₃N₄ stoichiometry. Iron has been introduced into some of these layers to study the effect of Fe on subsequent crystallisation to α-Si₃N₄. Rutherford backscattering and channeling, X-ray diffraction and cross-sectional transmission electron microscopy have been used to analyse these implanted samples before and after annealing to 1000°C. These results provide considerable insight into M-Si3N4 formed by another non-equilibrium mixing process, namely reactive ball milling or mechanochemistry.

Original language	English
Pages (from-to)	534-539
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	148
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(98)00815-5
Publication status	Published - 1999

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Li, Z. L., Wong-Leung, J., Deenapanray, P. N. K., Conway, M., Chivers, D. J., Fitz Gerald, J. D., & Williams, J. S. (1999). The role of Fe on the crystallisation of α-Si₃N₄ from amorphous Si-N formed by ion implantation. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148(1-4), 534-539. https://doi.org/10.1016/S0168-583X(98)00815-5

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title = "The role of Fe on the crystallisation of α-Si3N4 from amorphous Si-N formed by ion implantation",

abstract = "Ion implantation into Si has been used to produce near-surface, amorphous Si-N layers with the nitrogen content both below and exceeding Si3N4 stoichiometry. Iron has been introduced into some of these layers to study the effect of Fe on subsequent crystallisation to α-Si3N4. Rutherford backscattering and channeling, X-ray diffraction and cross-sectional transmission electron microscopy have been used to analyse these implanted samples before and after annealing to 1000°C. These results provide considerable insight into M-Si3N4 formed by another non-equilibrium mixing process, namely reactive ball milling or mechanochemistry.",

keywords = "Ball-milling, Defects, Ion-implantation, Silicon nitride",

author = "Li, {Z. L.} and J. Wong-Leung and Deenapanray, {P. N.K.} and M. Conway and Chivers, {D. J.} and {Fitz Gerald}, {J. D.} and Williams, {J. S.}",

year = "1999",

doi = "10.1016/S0168-583X(98)00815-5",

language = "English",

volume = "148",

pages = "534--539",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

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}

Li, ZL, Wong-Leung, J, Deenapanray, PNK, Conway, M, Chivers, DJ, Fitz Gerald, JD & Williams, JS 1999, 'The role of Fe on the crystallisation of α-Si₃N₄ from amorphous Si-N formed by ion implantation', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 148, no. 1-4, pp. 534-539. https://doi.org/10.1016/S0168-583X(98)00815-5

The role of Fe on the crystallisation of α-Si₃N₄ from amorphous Si-N formed by ion implantation. / Li, Z. L.; Wong-Leung, J.; Deenapanray, P. N.K. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 148, No. 1-4, 1999, p. 534-539.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The role of Fe on the crystallisation of α-Si3N4 from amorphous Si-N formed by ion implantation

AU - Li, Z. L.

AU - Wong-Leung, J.

AU - Deenapanray, P. N.K.

AU - Conway, M.

AU - Chivers, D. J.

AU - Fitz Gerald, J. D.

AU - Williams, J. S.

PY - 1999

Y1 - 1999

N2 - Ion implantation into Si has been used to produce near-surface, amorphous Si-N layers with the nitrogen content both below and exceeding Si3N4 stoichiometry. Iron has been introduced into some of these layers to study the effect of Fe on subsequent crystallisation to α-Si3N4. Rutherford backscattering and channeling, X-ray diffraction and cross-sectional transmission electron microscopy have been used to analyse these implanted samples before and after annealing to 1000°C. These results provide considerable insight into M-Si3N4 formed by another non-equilibrium mixing process, namely reactive ball milling or mechanochemistry.

AB - Ion implantation into Si has been used to produce near-surface, amorphous Si-N layers with the nitrogen content both below and exceeding Si3N4 stoichiometry. Iron has been introduced into some of these layers to study the effect of Fe on subsequent crystallisation to α-Si3N4. Rutherford backscattering and channeling, X-ray diffraction and cross-sectional transmission electron microscopy have been used to analyse these implanted samples before and after annealing to 1000°C. These results provide considerable insight into M-Si3N4 formed by another non-equilibrium mixing process, namely reactive ball milling or mechanochemistry.

KW - Ball-milling

KW - Defects

KW - Ion-implantation

KW - Silicon nitride

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DO - 10.1016/S0168-583X(98)00815-5

M3 - Article

SN - 0168-583X

VL - 148

SP - 534

EP - 539

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

The role of Fe on the crystallisation of α-Si₃N₄ from amorphous Si-N formed by ion implantation

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