The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells

Greg Jolley; Lan Fu; Hao Feng Lu; Hark Hoe Tan; Chennupati Jagadish

doi:10.1002/pip.2161

The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells

Greg Jolley^*, Lan Fu, Hao Feng Lu, Hark Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

We report on an experimental study of the intersubband optical response of an In_0.5Ga_0.5As/GaAs quantum dot solar cell (QDSC). By calculating the quantum dot absorption cross section, the strength of the intersubband optical transitions is gauged, and their importance and influence on the electrical properties of the solar cell can be compared with those of other physical processes such as thermal intersubband and optical interband transitions. The temperature-dependent photocurrent and dark current characteristics of the QDSC have also been analyzed in detail, leading to an understanding of the specific effects reducing the open-circuit voltage. The deviation of QDSCs from idealized models is discussed, and some conditions required for an improved open-circuit voltage are suggested.

Original language	English
Pages (from-to)	736-746
Number of pages	11
Journal	Progress in Photovoltaics: Research and Applications
Volume	21
Issue number	4
DOIs	https://doi.org/10.1002/pip.2161
Publication status	Published - Jun 2013

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title = "The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells",

abstract = "We report on an experimental study of the intersubband optical response of an In0.5Ga0.5As/GaAs quantum dot solar cell (QDSC). By calculating the quantum dot absorption cross section, the strength of the intersubband optical transitions is gauged, and their importance and influence on the electrical properties of the solar cell can be compared with those of other physical processes such as thermal intersubband and optical interband transitions. The temperature-dependent photocurrent and dark current characteristics of the QDSC have also been analyzed in detail, leading to an understanding of the specific effects reducing the open-circuit voltage. The deviation of QDSCs from idealized models is discussed, and some conditions required for an improved open-circuit voltage are suggested.",

keywords = "III-V semiconductors, intermediate band, intersubband transitions, quantum dot, solar cell",

author = "Greg Jolley and Lan Fu and Lu, {Hao Feng} and Tan, {Hark Hoe} and Chennupati Jagadish",

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T1 - The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells

AU - Jolley, Greg

AU - Fu, Lan

AU - Lu, Hao Feng

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2013/6

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N2 - We report on an experimental study of the intersubband optical response of an In0.5Ga0.5As/GaAs quantum dot solar cell (QDSC). By calculating the quantum dot absorption cross section, the strength of the intersubband optical transitions is gauged, and their importance and influence on the electrical properties of the solar cell can be compared with those of other physical processes such as thermal intersubband and optical interband transitions. The temperature-dependent photocurrent and dark current characteristics of the QDSC have also been analyzed in detail, leading to an understanding of the specific effects reducing the open-circuit voltage. The deviation of QDSCs from idealized models is discussed, and some conditions required for an improved open-circuit voltage are suggested.

AB - We report on an experimental study of the intersubband optical response of an In0.5Ga0.5As/GaAs quantum dot solar cell (QDSC). By calculating the quantum dot absorption cross section, the strength of the intersubband optical transitions is gauged, and their importance and influence on the electrical properties of the solar cell can be compared with those of other physical processes such as thermal intersubband and optical interband transitions. The temperature-dependent photocurrent and dark current characteristics of the QDSC have also been analyzed in detail, leading to an understanding of the specific effects reducing the open-circuit voltage. The deviation of QDSCs from idealized models is discussed, and some conditions required for an improved open-circuit voltage are suggested.

KW - III-V semiconductors

KW - intermediate band

KW - intersubband transitions

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KW - solar cell

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JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

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The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells

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