The role of oxygen on the stability of gettering of metals to cavities in silicon

J. S. Williams*, M. J. Conway, J. Wong-Leung, P. N.K. Deenapanray, M. Petravic, R. A. Brown, D. J. Eaglesham, D. C. Jacobson

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    27 Citations (Scopus)

    Abstract

    The effect of oxygen implanted into epitaxial Si layers on the ability to getter Au to nanocavities, previously formed by H implantation and annealing, has been studied by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectrometry. We demonstrate that oxygen is gettered to cavities during extended annealing at 950 °C. Furthermore, the arrival of oxygen at cavities is not only shown to inhibit subsequent attempts to getter Au to cavities, but also to eject chemisorbed Au from the cavity walls. Similar behavior is observed in Czochralski Si, where the source of oxygen is within the Si itself.

    Original languageEnglish
    Pages (from-to)2424-2426
    Number of pages3
    JournalApplied Physics Letters
    Volume75
    Issue number16
    DOIs
    Publication statusPublished - 18 Oct 1999

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