TY - GEN
T1 - The role of silicon interstitials in the formation of boron-oxygen defects in crystalline silicon
AU - Macdonald, Daniel
AU - Deenapanray, P. N.K.
AU - Cuevas, A.
AU - Diez, S.
AU - Glunz, S. W.
N1 - Publisher Copyright:
© (2005) Trans Tech Publications, Switzerland.
PY - 2005
Y1 - 2005
N2 - Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually triggered by illumination. Despite its importance in photovoltaic materials, the chemical make-up of the defect remains unclear. In this paper we examine whether the presence of excess silicon self-interstitials, introduced by ion-implantation, affects the formation of the defects under illumination. The results reveal that there is no discernible change in the carrier-induced defect concentration, although there is evidence for other defects caused by interactions between interstitials and oxygen. The insensitivity of the carrier-induced defect formation to the presence of silicon interstitials suggests that neither interstitials themselves, nor species heavily affected by their presence (such as interstitial boron), are likely to be involved in the defect structure, consistent with recent theoretical modelling.
AB - Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually triggered by illumination. Despite its importance in photovoltaic materials, the chemical make-up of the defect remains unclear. In this paper we examine whether the presence of excess silicon self-interstitials, introduced by ion-implantation, affects the formation of the defects under illumination. The results reveal that there is no discernible change in the carrier-induced defect concentration, although there is evidence for other defects caused by interactions between interstitials and oxygen. The insensitivity of the carrier-induced defect formation to the presence of silicon interstitials suggests that neither interstitials themselves, nor species heavily affected by their presence (such as interstitial boron), are likely to be involved in the defect structure, consistent with recent theoretical modelling.
KW - Boron-oxygen defect
KW - Crystalline silicon
KW - Czochralski
KW - Silicon interstitial
UR - http://www.scopus.com/inward/record.url?scp=30844451473&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.108-109.497
DO - 10.4028/www.scientific.net/SSP.108-109.497
M3 - Conference contribution
AN - SCOPUS:30844451473
SN - 9783908451136
T3 - Solid State Phenomena
SP - 497
EP - 502
BT - Gettering and Defect Engineering in Semiconductor Technology XI - GADEST 2005
A2 - Pichaud, B.
A2 - Claverie, A.
A2 - Alquier, D.
A2 - Richter, H.
A2 - Kittler, M.
A2 - Richter, H.
A2 - Kittler, M.
PB - Trans Tech Publications Ltd.
T2 - 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005
Y2 - 25 September 2005 through 30 September 2005
ER -