The size distribution of Ge nanocrystals in implanted and annealed silica

A. R. Dowd; D. Llewellyn; J. D. Fitz Gerald; R. G. Elliman

The size distribution of Ge nanocrystals in implanted and annealed silica

A. R. Dowd^*, D. Llewellyn, J. D. Fitz Gerald, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

This study examines the effect of implantation and annealing parameters on the formation of Ge crystallites in ion-implanted silica. Samples were implanted at room temperature or -196°C with 1.0 MeV Ge⁺ ions to fluences in the range from 0.6 to 3×10¹⁷ Ge.cm^-2. Ge nanocrystals were not observed in samples implanted at -196°C but were observed in samples irradiated at room temperature. Nanocrystals were observed in all samples after annealing and their size distribution was found to be almost independent of the implant fluence. The distributions were also shown to be asymmetrical with depth, with smaller nanocrystals located on the near-surface side of the implant distribution.

Original language	English
Pages (from-to)	R3.39.1-R3.39.12
Journal	Materials Research Society Symposium - Proceedings
Volume	650
Publication status	Published - 2001
Event	Microstructural Processes in Irradiated Materials-2000 - Boston, MA, United States Duration: 27 Nov 2000 → 29 Nov 2000

Cite this

@article{3c54a35c69b643fc860599bb7e4a7605,

title = "The size distribution of Ge nanocrystals in implanted and annealed silica",

abstract = "This study examines the effect of implantation and annealing parameters on the formation of Ge crystallites in ion-implanted silica. Samples were implanted at room temperature or -196°C with 1.0 MeV Ge+ ions to fluences in the range from 0.6 to 3×1017 Ge.cm-2. Ge nanocrystals were not observed in samples implanted at -196°C but were observed in samples irradiated at room temperature. Nanocrystals were observed in all samples after annealing and their size distribution was found to be almost independent of the implant fluence. The distributions were also shown to be asymmetrical with depth, with smaller nanocrystals located on the near-surface side of the implant distribution.",

author = "Dowd, {A. R.} and D. Llewellyn and {Fitz Gerald}, {J. D.} and Elliman, {R. G.}",

year = "2001",

language = "English",

volume = "650",

pages = "R3.39.1--R3.39.12",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Microstructural Processes in Irradiated Materials-2000 ; Conference date: 27-11-2000 Through 29-11-2000",

}

TY - JOUR

T1 - The size distribution of Ge nanocrystals in implanted and annealed silica

AU - Dowd, A. R.

AU - Llewellyn, D.

AU - Fitz Gerald, J. D.

AU - Elliman, R. G.

PY - 2001

Y1 - 2001

N2 - This study examines the effect of implantation and annealing parameters on the formation of Ge crystallites in ion-implanted silica. Samples were implanted at room temperature or -196°C with 1.0 MeV Ge+ ions to fluences in the range from 0.6 to 3×1017 Ge.cm-2. Ge nanocrystals were not observed in samples implanted at -196°C but were observed in samples irradiated at room temperature. Nanocrystals were observed in all samples after annealing and their size distribution was found to be almost independent of the implant fluence. The distributions were also shown to be asymmetrical with depth, with smaller nanocrystals located on the near-surface side of the implant distribution.

AB - This study examines the effect of implantation and annealing parameters on the formation of Ge crystallites in ion-implanted silica. Samples were implanted at room temperature or -196°C with 1.0 MeV Ge+ ions to fluences in the range from 0.6 to 3×1017 Ge.cm-2. Ge nanocrystals were not observed in samples implanted at -196°C but were observed in samples irradiated at room temperature. Nanocrystals were observed in all samples after annealing and their size distribution was found to be almost independent of the implant fluence. The distributions were also shown to be asymmetrical with depth, with smaller nanocrystals located on the near-surface side of the implant distribution.

UR - http://www.scopus.com/inward/record.url?scp=0034866337&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034866337

SN - 0272-9172

VL - 650

SP - R3.39.1-R3.39.12

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Microstructural Processes in Irradiated Materials-2000

Y2 - 27 November 2000 through 29 November 2000

ER -

The size distribution of Ge nanocrystals in implanted and annealed silica

Abstract

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