The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbOx films

M. Vos; X. Liu; P. L. Grande; S. K. Nandi; D. K. Venkatachalam; R. G. Elliman

doi:10.1016/j.nimb.2014.06.024

The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbO_x films

M. Vos^*, X. Liu, P. L. Grande, S. K. Nandi, D. K. Venkatachalam, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Electrons scattered over large angles at relatively high energies (40 keV) are used to study NbO_x films. These films were deposited by reactive sputter deposition on a Si substrate using a Nb target and an Ar/O₂ gas mixture. Energy spectra of electrons scattered from such samples exhibit elastic scattering peaks for each component due to the energy difference associated with scattering from different masses. The spectra provide in this way information about the film thickness as well as its stoichiometry. The stoichiometry and the deposition rate depends on the concentration of O₂ in the mixture. For Nb₂O₅-like films the energy loss measurements also give an estimate of the band gap, but for Nb films with lower O concentration the band gap is not resolved. This work illustrates the possibility of characterizing modern transition metal oxide films in a fairly simple electron scattering experiment.

Original language	English
Pages (from-to)	58-62
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	340
DOIs	https://doi.org/10.1016/j.nimb.2014.06.024
Publication status	Published - 1 Dec 2014

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Vos, M., Liu, X., Grande, P. L., Nandi, S. K., Venkatachalam, D. K., & Elliman, R. G. (2014). The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbO_x films. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 340, 58-62. https://doi.org/10.1016/j.nimb.2014.06.024

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title = "The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbOx films",

abstract = "Electrons scattered over large angles at relatively high energies (40 keV) are used to study NbOx films. These films were deposited by reactive sputter deposition on a Si substrate using a Nb target and an Ar/O2 gas mixture. Energy spectra of electrons scattered from such samples exhibit elastic scattering peaks for each component due to the energy difference associated with scattering from different masses. The spectra provide in this way information about the film thickness as well as its stoichiometry. The stoichiometry and the deposition rate depends on the concentration of O2 in the mixture. For Nb2O5-like films the energy loss measurements also give an estimate of the band gap, but for Nb films with lower O concentration the band gap is not resolved. This work illustrates the possibility of characterizing modern transition metal oxide films in a fairly simple electron scattering experiment.",

keywords = "Electron, NbO, Reactive sputter deposition, Rutherford backscattering",

author = "M. Vos and X. Liu and Grande, {P. L.} and Nandi, {S. K.} and Venkatachalam, {D. K.} and Elliman, {R. G.}",

year = "2014",

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doi = "10.1016/j.nimb.2014.06.024",

language = "English",

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Vos, M, Liu, X, Grande, PL, Nandi, SK, Venkatachalam, DK & Elliman, RG 2014, 'The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbO_x films', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 340, pp. 58-62. https://doi.org/10.1016/j.nimb.2014.06.024

The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbO_x films. / Vos, M.; Liu, X.; Grande, P. L. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 340, 01.12.2014, p. 58-62.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbOx films

AU - Vos, M.

AU - Liu, X.

AU - Grande, P. L.

AU - Nandi, S. K.

AU - Venkatachalam, D. K.

AU - Elliman, R. G.

PY - 2014/12/1

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N2 - Electrons scattered over large angles at relatively high energies (40 keV) are used to study NbOx films. These films were deposited by reactive sputter deposition on a Si substrate using a Nb target and an Ar/O2 gas mixture. Energy spectra of electrons scattered from such samples exhibit elastic scattering peaks for each component due to the energy difference associated with scattering from different masses. The spectra provide in this way information about the film thickness as well as its stoichiometry. The stoichiometry and the deposition rate depends on the concentration of O2 in the mixture. For Nb2O5-like films the energy loss measurements also give an estimate of the band gap, but for Nb films with lower O concentration the band gap is not resolved. This work illustrates the possibility of characterizing modern transition metal oxide films in a fairly simple electron scattering experiment.

AB - Electrons scattered over large angles at relatively high energies (40 keV) are used to study NbOx films. These films were deposited by reactive sputter deposition on a Si substrate using a Nb target and an Ar/O2 gas mixture. Energy spectra of electrons scattered from such samples exhibit elastic scattering peaks for each component due to the energy difference associated with scattering from different masses. The spectra provide in this way information about the film thickness as well as its stoichiometry. The stoichiometry and the deposition rate depends on the concentration of O2 in the mixture. For Nb2O5-like films the energy loss measurements also give an estimate of the band gap, but for Nb films with lower O concentration the band gap is not resolved. This work illustrates the possibility of characterizing modern transition metal oxide films in a fairly simple electron scattering experiment.

KW - Electron

KW - NbO

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KW - Rutherford backscattering

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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Vos M, Liu X, Grande PL, Nandi SK, Venkatachalam DK, Elliman RG. The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbO_x films. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2014 Dec 1;340:58-62. doi: 10.1016/j.nimb.2014.06.024

The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbO_x films

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