THEORETICAL ANALYSIS OF ENERGY SELECTIVE CONTACTS WITH Si QDS IN SiO2 MATRIX WITH SIC BARRIERS USING A 2 DIMENSIONAL MODEL (poster)

Binesh Puthen-Veetil; Dirk Koenig; Gavin Conibeer; Martin A. Green

THEORETICAL ANALYSIS OF ENERGY SELECTIVE CONTACTS WITH Si QDS IN SiO2 MATRIX WITH SIC BARRIERS USING A 2 DIMENSIONAL MODEL (poster)

Binesh Puthen-Veetil^*, Dirk Koenig, Gavin Conibeer, Martin A. Green

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Double barrier Quantum Dot structures are potential candidates for Energy Selective Contacts for Hot Carrier Solar Cells. Silicon QDs in SiO2 matrix with SiC barriers make a very effective Energy Selective Contact and has several advantages over the same structure with SiO2 barriers. In this paper, the Energy Selective Contacts are studied for their energy selectivity using a two dimensional scattering matrix model. The improvement in conduction by using SiC barriers compared to that by using SiO2 barriers is studied quantitatively. The impacts of configurational and morphological disorders of the dots on the filtering properties of Energy Selective Contacts are analyzed. The impacts of external electric field and temperature on the electrical properties of the QD structure are also studied and the I-V characteristics is obtained.
Keywords: Modeling, Quantum Dots, Silicon Carbide

Original language	English
Title of host publication	Proc. of the 24th European Photovoltaic Solar Energy Conference (24E-PVSEC)
Subtitle of host publication	Proc. on CD-ROM
Editors	Wim Sinke, Heinz Ossenbrink, peter Helm
Pages	427-430
Number of pages	4
Publication status	Published - 25 Sept 2009
Externally published	Yes
Event	24th European Photovoltaic Solar Energy Conference 2009 - Hamburg, Germany Duration: 21 Sept 2009 → 25 Sept 2009 Conference number: 24

Conference

Conference	24th European Photovoltaic Solar Energy Conference 2009
Abbreviated title	EUPVSEC 2009
Country/Territory	Germany
City	Hamburg
Period	21/09/09 → 25/09/09
Other	September 21-24 2009

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Puthen-Veetil, B., Koenig, D., Conibeer, G., & Green, M. A. (2009). THEORETICAL ANALYSIS OF ENERGY SELECTIVE CONTACTS WITH Si QDS IN SiO2 MATRIX WITH SIC BARRIERS USING A 2 DIMENSIONAL MODEL (poster). In W. Sinke, H. Ossenbrink, & P. Helm (Eds.), Proc. of the 24th European Photovoltaic Solar Energy Conference (24E-PVSEC): Proc. on CD-ROM (pp. 427-430). Article 1CV.3.81 https://www.researchgate.net/publication/310771972_Theoretical_Analysis_of_Energy_Selective_Contacts_with_Si_QDs_in_SiO2_Matrix_with_SiC_Barriers_Using_a_2_Dimensional_Model

@inproceedings{ba691a5e2fca4f538157b3a9911778fa,

title = "THEORETICAL ANALYSIS OF ENERGY SELECTIVE CONTACTS WITH Si QDS IN SiO2 MATRIX WITH SIC BARRIERS USING A 2 DIMENSIONAL MODEL (poster)",

abstract = "Double barrier Quantum Dot structures are potential candidates for Energy Selective Contacts for Hot Carrier Solar Cells. Silicon QDs in SiO2 matrix with SiC barriers make a very effective Energy Selective Contact and has several advantages over the same structure with SiO2 barriers. In this paper, the Energy Selective Contacts are studied for their energy selectivity using a two dimensional scattering matrix model. The improvement in conduction by using SiC barriers compared to that by using SiO2 barriers is studied quantitatively. The impacts of configurational and morphological disorders of the dots on the filtering properties of Energy Selective Contacts are analyzed. The impacts of external electric field and temperature on the electrical properties of the QD structure are also studied and the I-V characteristics is obtained.Keywords: Modeling, Quantum Dots, Silicon Carbide",

keywords = "Modeling, Quantum Dots, Silicon Carbide",

author = "Binesh Puthen-Veetil and Dirk Koenig and Gavin Conibeer and Green, {Martin A.}",

year = "2009",

month = sep,

day = "25",

language = "English",

pages = "427--430",

editor = "Wim Sinke and Heinz Ossenbrink and peter Helm",

booktitle = "Proc. of the 24th European Photovoltaic Solar Energy Conference (24E-PVSEC)",

note = "24th European Photovoltaic Solar Energy Conference 2009, EUPVSEC 2009 ; Conference date: 21-09-2009 Through 25-09-2009",

}

Puthen-Veetil, B, Koenig, D, Conibeer, G & Green, MA 2009, THEORETICAL ANALYSIS OF ENERGY SELECTIVE CONTACTS WITH Si QDS IN SiO2 MATRIX WITH SIC BARRIERS USING A 2 DIMENSIONAL MODEL (poster). in W Sinke, H Ossenbrink & P Helm (eds), Proc. of the 24th European Photovoltaic Solar Energy Conference (24E-PVSEC): Proc. on CD-ROM., 1CV.3.81, pp. 427-430, 24th European Photovoltaic Solar Energy Conference 2009, Hamburg, Germany, 21/09/09. <https://www.researchgate.net/publication/310771972_Theoretical_Analysis_of_Energy_Selective_Contacts_with_Si_QDs_in_SiO2_Matrix_with_SiC_Barriers_Using_a_2_Dimensional_Model>

THEORETICAL ANALYSIS OF ENERGY SELECTIVE CONTACTS WITH Si QDS IN SiO2 MATRIX WITH SIC BARRIERS USING A 2 DIMENSIONAL MODEL (poster). / Puthen-Veetil, Binesh; Koenig, Dirk; Conibeer, Gavin et al.
Proc. of the 24th European Photovoltaic Solar Energy Conference (24E-PVSEC): Proc. on CD-ROM. ed. / Wim Sinke; Heinz Ossenbrink; peter Helm. 2009. p. 427-430 1CV.3.81.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - THEORETICAL ANALYSIS OF ENERGY SELECTIVE CONTACTS WITH Si QDS IN SiO2 MATRIX WITH SIC BARRIERS USING A 2 DIMENSIONAL MODEL (poster)

AU - Puthen-Veetil, Binesh

AU - Koenig, Dirk

AU - Conibeer, Gavin

AU - Green, Martin A.

N1 - Conference code: 24

PY - 2009/9/25

Y1 - 2009/9/25

N2 - Double barrier Quantum Dot structures are potential candidates for Energy Selective Contacts for Hot Carrier Solar Cells. Silicon QDs in SiO2 matrix with SiC barriers make a very effective Energy Selective Contact and has several advantages over the same structure with SiO2 barriers. In this paper, the Energy Selective Contacts are studied for their energy selectivity using a two dimensional scattering matrix model. The improvement in conduction by using SiC barriers compared to that by using SiO2 barriers is studied quantitatively. The impacts of configurational and morphological disorders of the dots on the filtering properties of Energy Selective Contacts are analyzed. The impacts of external electric field and temperature on the electrical properties of the QD structure are also studied and the I-V characteristics is obtained.Keywords: Modeling, Quantum Dots, Silicon Carbide

AB - Double barrier Quantum Dot structures are potential candidates for Energy Selective Contacts for Hot Carrier Solar Cells. Silicon QDs in SiO2 matrix with SiC barriers make a very effective Energy Selective Contact and has several advantages over the same structure with SiO2 barriers. In this paper, the Energy Selective Contacts are studied for their energy selectivity using a two dimensional scattering matrix model. The improvement in conduction by using SiC barriers compared to that by using SiO2 barriers is studied quantitatively. The impacts of configurational and morphological disorders of the dots on the filtering properties of Energy Selective Contacts are analyzed. The impacts of external electric field and temperature on the electrical properties of the QD structure are also studied and the I-V characteristics is obtained.Keywords: Modeling, Quantum Dots, Silicon Carbide

KW - Modeling

KW - Quantum Dots

KW - Silicon Carbide

M3 - Conference contribution

SP - 427

EP - 430

BT - Proc. of the 24th European Photovoltaic Solar Energy Conference (24E-PVSEC)

A2 - Sinke, Wim

A2 - Ossenbrink, Heinz

A2 - Helm, peter

T2 - 24th European Photovoltaic Solar Energy Conference 2009

Y2 - 21 September 2009 through 25 September 2009

ER -

THEORETICAL ANALYSIS OF ENERGY SELECTIVE CONTACTS WITH Si QDS IN SiO2 MATRIX WITH SIC BARRIERS USING A 2 DIMENSIONAL MODEL (poster)

Abstract

Conference

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