Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells

F. Hegeler; M. O. Manasreh; C. Morath; P. Ballet; H. Yang; G. J. Salamo; H. H. Tan; Chennupati Jagadish

doi:10.1063/1.1320846

Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells

F. Hegeler^*, M. O. Manasreh, C. Morath, P. Ballet, H. Yang, G. J. Salamo, H. H. Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Intersubband transitions in 1 MeV proton-irradiated GaAs/AlGaAs multiple quantum wells were studied using an optical absorption technique and isochronal thermal annealing. The intersubband transitions were completely depleted in samples irradiated with doses as low as 4 × 10¹⁴ cm^-2. More than 80% recovery of these depleted transitions was achieved after the samples were thermally annealed at temperatures less than 650°C. The total integrated areas and peak position energies of the intersubband transitions in irradiated and unirradiated samples were monitored as a function of annealing temperature. It was noted that the recovery of the depleted intersubband transitions in irradiated samples depend on the irradiation dose and thermal annealing temperature.

Original language	English
Pages (from-to)	2867-2869
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	18
DOIs	https://doi.org/10.1063/1.1320846
Publication status	Published - 30 Oct 2000

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title = "Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells",

abstract = "Intersubband transitions in 1 MeV proton-irradiated GaAs/AlGaAs multiple quantum wells were studied using an optical absorption technique and isochronal thermal annealing. The intersubband transitions were completely depleted in samples irradiated with doses as low as 4 × 1014 cm-2. More than 80% recovery of these depleted transitions was achieved after the samples were thermally annealed at temperatures less than 650°C. The total integrated areas and peak position energies of the intersubband transitions in irradiated and unirradiated samples were monitored as a function of annealing temperature. It was noted that the recovery of the depleted intersubband transitions in irradiated samples depend on the irradiation dose and thermal annealing temperature.",

author = "F. Hegeler and Manasreh, {M. O.} and C. Morath and P. Ballet and H. Yang and Salamo, {G. J.} and Tan, {H. H.} and Chennupati Jagadish",

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T1 - Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells

AU - Hegeler, F.

AU - Manasreh, M. O.

AU - Morath, C.

AU - Ballet, P.

AU - Yang, H.

AU - Salamo, G. J.

AU - Tan, H. H.

AU - Jagadish, Chennupati

PY - 2000/10/30

Y1 - 2000/10/30

N2 - Intersubband transitions in 1 MeV proton-irradiated GaAs/AlGaAs multiple quantum wells were studied using an optical absorption technique and isochronal thermal annealing. The intersubband transitions were completely depleted in samples irradiated with doses as low as 4 × 1014 cm-2. More than 80% recovery of these depleted transitions was achieved after the samples were thermally annealed at temperatures less than 650°C. The total integrated areas and peak position energies of the intersubband transitions in irradiated and unirradiated samples were monitored as a function of annealing temperature. It was noted that the recovery of the depleted intersubband transitions in irradiated samples depend on the irradiation dose and thermal annealing temperature.

AB - Intersubband transitions in 1 MeV proton-irradiated GaAs/AlGaAs multiple quantum wells were studied using an optical absorption technique and isochronal thermal annealing. The intersubband transitions were completely depleted in samples irradiated with doses as low as 4 × 1014 cm-2. More than 80% recovery of these depleted transitions was achieved after the samples were thermally annealed at temperatures less than 650°C. The total integrated areas and peak position energies of the intersubband transitions in irradiated and unirradiated samples were monitored as a function of annealing temperature. It was noted that the recovery of the depleted intersubband transitions in irradiated samples depend on the irradiation dose and thermal annealing temperature.

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U2 - 10.1063/1.1320846

DO - 10.1063/1.1320846

M3 - Article

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VL - 77

SP - 2867

EP - 2869

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells

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