Thermal annealing study on InGaAs/GaAs quantum dot infrared photodetectors

L. Fu; I. McKerracher; H. H. Tan; C. Jagadish

doi:10.1109/ICONN.2006.340661

Thermal annealing study on InGaAs/GaAs quantum dot infrared photodetectors

L. Fu^*, I. McKerracher, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a blue-shifted wavelength and the spectral response exhibited red-shift from the annealed QDIPs in comparison with the as-grown sample. The overall device performance was not affected by low annealing temperature however for high annealing temperature, some degradation in device detectivity (but not responsivity) was observed. This is a consequence of increased dark current due to defect formation and increased ground state energy.

Original language	English
Title of host publication	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
Pages	493-496
Number of pages	4
DOIs	https://doi.org/10.1109/ICONN.2006.340661
Publication status	Published - 2006
Event	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 - Brisbane, Australia Duration: 3 Jul 2006 → 6 Jul 2006

Publication series

Name	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

Conference

Conference	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006
Country/Territory	Australia
City	Brisbane
Period	3/07/06 → 6/07/06

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10.1109/ICONN.2006.340661

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Fu, L., McKerracher, I., Tan, H. H., & Jagadish, C. (2006). Thermal annealing study on InGaAs/GaAs quantum dot infrared photodetectors. In Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN (pp. 493-496). Article 4143441 (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN). https://doi.org/10.1109/ICONN.2006.340661

@inproceedings{72cda1d7d00a4b628b9ccfcabbde6de8,

title = "Thermal annealing study on InGaAs/GaAs quantum dot infrared photodetectors",

abstract = "In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a blue-shifted wavelength and the spectral response exhibited red-shift from the annealed QDIPs in comparison with the as-grown sample. The overall device performance was not affected by low annealing temperature however for high annealing temperature, some degradation in device detectivity (but not responsivity) was observed. This is a consequence of increased dark current due to defect formation and increased ground state energy.",

keywords = "Interdiffusion, Metalorganic chemical vapor deposition, Quantum dot infrared photodetector, Rapid thermal annealing",

author = "L. Fu and I. McKerracher and Tan, {H. H.} and C. Jagadish",

year = "2006",

doi = "10.1109/ICONN.2006.340661",

language = "English",

isbn = "1424404533",

series = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

pages = "493--496",

booktitle = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

note = "2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 ; Conference date: 03-07-2006 Through 06-07-2006",

}

Fu, L, McKerracher, I, Tan, HH & Jagadish, C 2006, Thermal annealing study on InGaAs/GaAs quantum dot infrared photodetectors. in Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN., 4143441, Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, pp. 493-496, 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006, Brisbane, Australia, 3/07/06. https://doi.org/10.1109/ICONN.2006.340661

Thermal annealing study on InGaAs/GaAs quantum dot infrared photodetectors. / Fu, L.; McKerracher, I.; Tan, H. H. et al.
Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN. 2006. p. 493-496 4143441 (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Thermal annealing study on InGaAs/GaAs quantum dot infrared photodetectors

AU - Fu, L.

AU - McKerracher, I.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2006

Y1 - 2006

N2 - In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a blue-shifted wavelength and the spectral response exhibited red-shift from the annealed QDIPs in comparison with the as-grown sample. The overall device performance was not affected by low annealing temperature however for high annealing temperature, some degradation in device detectivity (but not responsivity) was observed. This is a consequence of increased dark current due to defect formation and increased ground state energy.

AB - In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a blue-shifted wavelength and the spectral response exhibited red-shift from the annealed QDIPs in comparison with the as-grown sample. The overall device performance was not affected by low annealing temperature however for high annealing temperature, some degradation in device detectivity (but not responsivity) was observed. This is a consequence of increased dark current due to defect formation and increased ground state energy.

KW - Interdiffusion

KW - Metalorganic chemical vapor deposition

KW - Quantum dot infrared photodetector

KW - Rapid thermal annealing

UR - http://www.scopus.com/inward/record.url?scp=48749120926&partnerID=8YFLogxK

U2 - 10.1109/ICONN.2006.340661

DO - 10.1109/ICONN.2006.340661

M3 - Conference contribution

SN - 1424404533

SN - 9781424404537

T3 - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

SP - 493

EP - 496

BT - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

T2 - 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006

Y2 - 3 July 2006 through 6 July 2006

ER -

Thermal annealing study on InGaAs/GaAs quantum dot infrared photodetectors

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