Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers

F. E. Rougieux; N. E. Grant; D. Macdonald

doi:10.1002/pssr.201308053

Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers

F. E. Rougieux^*, N. E. Grant, D. Macdonald

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

In this study, we uncover a recombination-active grown-in defect reducing the minority carrier lifetime of Czochralski grown n-type silicon from 5 ms to below 2 ms. We also demonstrate that the defect can be de-activated by annealing between 300 °C and 360 °C. Our experimental findings suggest that vacancy-related pairs incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.

Original language	English
Pages (from-to)	616-618
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	7
Issue number	9
DOIs	https://doi.org/10.1002/pssr.201308053
Publication status	Published - Sept 2013

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title = "Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers",

abstract = "In this study, we uncover a recombination-active grown-in defect reducing the minority carrier lifetime of Czochralski grown n-type silicon from 5 ms to below 2 ms. We also demonstrate that the defect can be de-activated by annealing between 300 °C and 360 °C. Our experimental findings suggest that vacancy-related pairs incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.",

keywords = "Annealing, Carrier lifetime, Point defects, Silicon",

author = "Rougieux, {F. E.} and Grant, {N. E.} and D. Macdonald",

year = "2013",

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AU - Grant, N. E.

AU - Macdonald, D.

PY - 2013/9

Y1 - 2013/9

N2 - In this study, we uncover a recombination-active grown-in defect reducing the minority carrier lifetime of Czochralski grown n-type silicon from 5 ms to below 2 ms. We also demonstrate that the defect can be de-activated by annealing between 300 °C and 360 °C. Our experimental findings suggest that vacancy-related pairs incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.

AB - In this study, we uncover a recombination-active grown-in defect reducing the minority carrier lifetime of Czochralski grown n-type silicon from 5 ms to below 2 ms. We also demonstrate that the defect can be de-activated by annealing between 300 °C and 360 °C. Our experimental findings suggest that vacancy-related pairs incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.

KW - Annealing

KW - Carrier lifetime

KW - Point defects

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=84884201827&partnerID=8YFLogxK

U2 - 10.1002/pssr.201308053

DO - 10.1002/pssr.201308053

M3 - Article

SN - 1862-6254

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SP - 616

EP - 618

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 9

ER -

Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers

Abstract

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