Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing

Xiaoming Wen; J. A. Davis; L. V. Dao; P. Hannaford; V. A. Coleman; H. H. Tan; C. Jagadish; K. Koike; S. Sasa; M. Inoue; M. Yano

doi:10.1016/j.jlumin.2008.09.006

Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing

Xiaoming Wen^*, J. A. Davis, L. V. Dao, P. Hannaford, V. A. Coleman, H. H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, M. Yano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The temperature-dependent photoluminescence in oxygen-implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells is investigated. A difference in the thermal quenching of the photoluminescence is found between the implanted and unimplanted quantum wells. Oxygen implantation and subsequent rapid thermal annealing results in the diffusion of magnesium atoms into quantum wells and thus, leads to an increased fluctuation in the potential of the quantum wells and the observation of a large thermal activation energy. However, a high dose of implantation results in large defect clusters and thus an additional nonradiative channel, which leads to a flat potential fluctuation and a small thermal activation energy.

Original language	English
Pages (from-to)	153-157
Number of pages	5
Journal	Journal of Luminescence
Volume	129
Issue number	2
DOIs	https://doi.org/10.1016/j.jlumin.2008.09.006
Publication status	Published - Feb 2009

Access to Document

10.1016/j.jlumin.2008.09.006

Cite this

@article{78c4146821044b2d8defb35afb6f160b,

title = "Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing",

abstract = "The temperature-dependent photoluminescence in oxygen-implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells is investigated. A difference in the thermal quenching of the photoluminescence is found between the implanted and unimplanted quantum wells. Oxygen implantation and subsequent rapid thermal annealing results in the diffusion of magnesium atoms into quantum wells and thus, leads to an increased fluctuation in the potential of the quantum wells and the observation of a large thermal activation energy. However, a high dose of implantation results in large defect clusters and thus an additional nonradiative channel, which leads to a flat potential fluctuation and a small thermal activation energy.",

keywords = "Ion implantation, Thermal photoluminescence quenching, ZnO/ZnMgO multiple quantum wells",

author = "Xiaoming Wen and Davis, {J. A.} and Dao, {L. V.} and P. Hannaford and Coleman, {V. A.} and Tan, {H. H.} and C. Jagadish and K. Koike and S. Sasa and M. Inoue and M. Yano",

year = "2009",

month = feb,

doi = "10.1016/j.jlumin.2008.09.006",

language = "English",

volume = "129",

pages = "153--157",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing

AU - Wen, Xiaoming

AU - Davis, J. A.

AU - Dao, L. V.

AU - Hannaford, P.

AU - Coleman, V. A.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Koike, K.

AU - Sasa, S.

AU - Inoue, M.

AU - Yano, M.

PY - 2009/2

Y1 - 2009/2

N2 - The temperature-dependent photoluminescence in oxygen-implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells is investigated. A difference in the thermal quenching of the photoluminescence is found between the implanted and unimplanted quantum wells. Oxygen implantation and subsequent rapid thermal annealing results in the diffusion of magnesium atoms into quantum wells and thus, leads to an increased fluctuation in the potential of the quantum wells and the observation of a large thermal activation energy. However, a high dose of implantation results in large defect clusters and thus an additional nonradiative channel, which leads to a flat potential fluctuation and a small thermal activation energy.

AB - The temperature-dependent photoluminescence in oxygen-implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells is investigated. A difference in the thermal quenching of the photoluminescence is found between the implanted and unimplanted quantum wells. Oxygen implantation and subsequent rapid thermal annealing results in the diffusion of magnesium atoms into quantum wells and thus, leads to an increased fluctuation in the potential of the quantum wells and the observation of a large thermal activation energy. However, a high dose of implantation results in large defect clusters and thus an additional nonradiative channel, which leads to a flat potential fluctuation and a small thermal activation energy.

KW - Ion implantation

KW - Thermal photoluminescence quenching

KW - ZnO/ZnMgO multiple quantum wells

UR - http://www.scopus.com/inward/record.url?scp=55749098469&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2008.09.006

DO - 10.1016/j.jlumin.2008.09.006

M3 - Article

SN - 0022-2313

VL - 129

SP - 153

EP - 157

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 2

ER -

Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing

Abstract

Access to Document

Other files and links

Fingerprint

Cite this