Abstract
A new impurity redistribution mechanism is reported for low temperature annealing (525 degree C) of (100) Si samples implanted with high indium doses. The redistribution is a strong function of implant dose and is believed to be stress related.
| Original language | English |
|---|---|
| Pages (from-to) | 77-83 |
| Number of pages | 7 |
| Journal | Radiation effects letters |
| Volume | 63 |
| Issue number | 3 |
| Publication status | Published - 1981 |