Thermal stability of ion-implanted ZnO

V. A. Coleman; H. H. Tan; C. Jagadish; S. O. Kucheyev; J. Zou

doi:10.1063/1.2140481

Thermal stability of ion-implanted ZnO

V. A. Coleman^*, H. H. Tan, C. Jagadish, S. O. Kucheyev, J. Zou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

Zinc oxide single crystals implanted at room temperature with high-dose (1.4× 1017 cm-2) 300 keV As+ ions are annealed at 1000-1200 °C. Damage recovery is studied by a combination of Rutherford backscattering/channeling spectrometry (RBS/C), cross-sectional transmission electron microscopy (XTEM), and atomic force microscopy. Results show that such a thermal treatment leads to the decomposition and evaporation of the heavily damaged layer instead of apparent defect recovery and recrystallization that could be inferred from RBS/C and XTEM data alone. This study shows that heavily damaged ZnO has relatively poor thermal stability compared to as-grown ZnO which is a significant result and has implications for understanding results on thermal annealing of ion-implanted ZnO.

Original language	English
Article number	231912
Pages (from-to)	1-2
Number of pages	2
Journal	Applied Physics Letters
Volume	87
Issue number	23
DOIs	https://doi.org/10.1063/1.2140481
Publication status	Published - 2005

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title = "Thermal stability of ion-implanted ZnO",

abstract = "Zinc oxide single crystals implanted at room temperature with high-dose (1.4× 1017 cm-2) 300 keV As+ ions are annealed at 1000-1200 °C. Damage recovery is studied by a combination of Rutherford backscattering/channeling spectrometry (RBS/C), cross-sectional transmission electron microscopy (XTEM), and atomic force microscopy. Results show that such a thermal treatment leads to the decomposition and evaporation of the heavily damaged layer instead of apparent defect recovery and recrystallization that could be inferred from RBS/C and XTEM data alone. This study shows that heavily damaged ZnO has relatively poor thermal stability compared to as-grown ZnO which is a significant result and has implications for understanding results on thermal annealing of ion-implanted ZnO.",

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T1 - Thermal stability of ion-implanted ZnO

AU - Coleman, V. A.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Kucheyev, S. O.

AU - Zou, J.

PY - 2005

Y1 - 2005

N2 - Zinc oxide single crystals implanted at room temperature with high-dose (1.4× 1017 cm-2) 300 keV As+ ions are annealed at 1000-1200 °C. Damage recovery is studied by a combination of Rutherford backscattering/channeling spectrometry (RBS/C), cross-sectional transmission electron microscopy (XTEM), and atomic force microscopy. Results show that such a thermal treatment leads to the decomposition and evaporation of the heavily damaged layer instead of apparent defect recovery and recrystallization that could be inferred from RBS/C and XTEM data alone. This study shows that heavily damaged ZnO has relatively poor thermal stability compared to as-grown ZnO which is a significant result and has implications for understanding results on thermal annealing of ion-implanted ZnO.

AB - Zinc oxide single crystals implanted at room temperature with high-dose (1.4× 1017 cm-2) 300 keV As+ ions are annealed at 1000-1200 °C. Damage recovery is studied by a combination of Rutherford backscattering/channeling spectrometry (RBS/C), cross-sectional transmission electron microscopy (XTEM), and atomic force microscopy. Results show that such a thermal treatment leads to the decomposition and evaporation of the heavily damaged layer instead of apparent defect recovery and recrystallization that could be inferred from RBS/C and XTEM data alone. This study shows that heavily damaged ZnO has relatively poor thermal stability compared to as-grown ZnO which is a significant result and has implications for understanding results on thermal annealing of ion-implanted ZnO.

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DO - 10.1063/1.2140481

M3 - Article

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VL - 87

SP - 1

EP - 2

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 231912

ER -

Thermal stability of ion-implanted ZnO

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