@inproceedings{6fef27d2b0794c7689b8d54145faa669,
title = "Thermally Stable Epiwafers for PV Applications",
abstract = "This work assesses the thermal stability of n-type Epiwafers after a boron diffusion based on the carrier lifetime measurements and photoluminescence images. The Epiwafers show a high bulk quality (iVoc > 735-745 mV) in their initial state after passivation with PECVD SiNx:H films. After a customized thermal budget for boron diffusion, the Epiwafers did not show any significant degradation, suggesting their high thermal stability. In contrast, some n-type Czochralski (nCz) silicon control samples degraded significantly (∆i Voc = -30 mV) due to the formation of ring defects during boron diffusion.",
keywords = "Boron-Diffusion, Epiwafers, Thermal-Stability",
author = "Rabin Basnet and Clemens Winter and Nicole Bein and Matthias Heilig and Frank siebke and Giuliano Vescavo and Daniel MacDonald",
year = "2026",
month = jan,
day = "20",
doi = "10.52825/siliconpv.v3i.2690",
language = "English",
volume = "3 (2025)",
series = "Siliconpv Conference Proceedings",
editor = "S Bonilla",
booktitle = "SiliconPV 2025, 15th International Conference on Crystalline Silicon Photovoltaics",
}