Thermally stimulated luminescence in ion-implanted GaAs

We have studied the temperature dependence of the luminescence of ion implanted GaAs between 10 and 300 K. We found that at certain temperatures the luminescence increases with increasing temperature. We attribute these localised increases in the luminescence intensity to the thermal excitation of carriers out of traps, or in other words, to thermally stimulated luminescence or thermoluminescence. Model calculations which include thermoluminescence produce excellent agreement with the experimental data and allow us to determine the trap parameters.