Thin crystalline macroporous silicon solar cells with ion implanted emitter

Marco Ernst; Henning Schulte-Huxel; Raphael Niepelt; Sarah Kajari-Schröder; Rolf Brendel

doi:10.1016/j.egypro.2013.07.364

Thin crystalline macroporous silicon solar cells with ion implanted emitter

Marco Ernst^*, Henning Schulte-Huxel, Raphael Niepelt, Sarah Kajari-Schröder, Rolf Brendel

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

We separate a (34 ± 2) μm-thick macroporous Si layer from an n-type Si wafer by means of electrochemical etching. The porosity is p = (26.2 ± 2.4)%. We use ion implantation to selectively dope the outer surfaces of the macroporous Si layer. No masking of the surface is required. The pores are open during the implantation process. We fabricate a macroporous Si solar cell with an implanted boron emitter at the front side and an implanted phosphorus region at the rear side. The short-circuit current density is 34.8 mA cm^-2 and the open-circuit voltage is 562 mV. With a fill factor of 69.1% the cell achieves an energy-conversion efficiency of 13.5%.

Original language	English
Pages (from-to)	910-918
Number of pages	9
Journal	Energy Procedia
Volume	38
DOIs	https://doi.org/10.1016/j.egypro.2013.07.364
Publication status	Published - 2013
Externally published	Yes
Event	3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013 - Hamelin, Germany Duration: 25 Mar 2013 → 27 Mar 2013

Access to Document

10.1016/j.egypro.2013.07.364

Cite this

@article{6f0776b248a0454aa9ed3894935914d4,

title = "Thin crystalline macroporous silicon solar cells with ion implanted emitter",

abstract = "We separate a (34 ± 2) μm-thick macroporous Si layer from an n-type Si wafer by means of electrochemical etching. The porosity is p = (26.2 ± 2.4)%. We use ion implantation to selectively dope the outer surfaces of the macroporous Si layer. No masking of the surface is required. The pores are open during the implantation process. We fabricate a macroporous Si solar cell with an implanted boron emitter at the front side and an implanted phosphorus region at the rear side. The short-circuit current density is 34.8 mA cm-2 and the open-circuit voltage is 562 mV. With a fill factor of 69.1% the cell achieves an energy-conversion efficiency of 13.5%.",

keywords = "Ion implantation, Kerf-free, Layer transfer, Macroporous silicon, Thin films",

author = "Marco Ernst and Henning Schulte-Huxel and Raphael Niepelt and Sarah Kajari-Schr{\"o}der and Rolf Brendel",

year = "2013",

doi = "10.1016/j.egypro.2013.07.364",

language = "English",

volume = "38",

pages = "910--918",

journal = "Energy Procedia",

issn = "1876-6102",

publisher = "Elsevier B.V.",

note = "3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013 ; Conference date: 25-03-2013 Through 27-03-2013",

}

TY - JOUR

T1 - Thin crystalline macroporous silicon solar cells with ion implanted emitter

AU - Ernst, Marco

AU - Schulte-Huxel, Henning

AU - Niepelt, Raphael

AU - Kajari-Schröder, Sarah

AU - Brendel, Rolf

PY - 2013

Y1 - 2013

N2 - We separate a (34 ± 2) μm-thick macroporous Si layer from an n-type Si wafer by means of electrochemical etching. The porosity is p = (26.2 ± 2.4)%. We use ion implantation to selectively dope the outer surfaces of the macroporous Si layer. No masking of the surface is required. The pores are open during the implantation process. We fabricate a macroporous Si solar cell with an implanted boron emitter at the front side and an implanted phosphorus region at the rear side. The short-circuit current density is 34.8 mA cm-2 and the open-circuit voltage is 562 mV. With a fill factor of 69.1% the cell achieves an energy-conversion efficiency of 13.5%.

AB - We separate a (34 ± 2) μm-thick macroporous Si layer from an n-type Si wafer by means of electrochemical etching. The porosity is p = (26.2 ± 2.4)%. We use ion implantation to selectively dope the outer surfaces of the macroporous Si layer. No masking of the surface is required. The pores are open during the implantation process. We fabricate a macroporous Si solar cell with an implanted boron emitter at the front side and an implanted phosphorus region at the rear side. The short-circuit current density is 34.8 mA cm-2 and the open-circuit voltage is 562 mV. With a fill factor of 69.1% the cell achieves an energy-conversion efficiency of 13.5%.

KW - Ion implantation

KW - Kerf-free

KW - Layer transfer

KW - Macroporous silicon

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=84898720921&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2013.07.364

DO - 10.1016/j.egypro.2013.07.364

M3 - Conference article

SN - 1876-6102

VL - 38

SP - 910

EP - 918

JO - Energy Procedia

JF - Energy Procedia

T2 - 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013

Y2 - 25 March 2013 through 27 March 2013

ER -

Thin crystalline macroporous silicon solar cells with ion implanted emitter

Abstract

Access to Document

Other files and links

Fingerprint

Cite this