Thin-film adhesion changes induced by electron irradiation

I. V. Mitchell; J. S. Williams; P. Smith; R. G. Elliman

doi:10.1063/1.94705

Thin-film adhesion changes induced by electron irradiation

I. V. Mitchell^*, J. S. Williams, P. Smith, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

The adhesion of thin films of gold, sputter deposited onto silicon, is shown to be improved by subsequent irradiation with 5-30-keV electrons. The similarities between electron and heavy ion irradiation effects suggest a common (electronic) origin for the change in interfacial bonding.

Original language	English
Pages (from-to)	193-195
Number of pages	3
Journal	Applied Physics Letters
Volume	44
Issue number	2
DOIs	https://doi.org/10.1063/1.94705
Publication status	Published - 1984
Externally published	Yes

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title = "Thin-film adhesion changes induced by electron irradiation",

abstract = "The adhesion of thin films of gold, sputter deposited onto silicon, is shown to be improved by subsequent irradiation with 5-30-keV electrons. The similarities between electron and heavy ion irradiation effects suggest a common (electronic) origin for the change in interfacial bonding.",

author = "Mitchell, {I. V.} and Williams, {J. S.} and P. Smith and Elliman, {R. G.}",

year = "1984",

doi = "10.1063/1.94705",

language = "English",

volume = "44",

pages = "193--195",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

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T1 - Thin-film adhesion changes induced by electron irradiation

AU - Mitchell, I. V.

AU - Williams, J. S.

AU - Smith, P.

AU - Elliman, R. G.

PY - 1984

Y1 - 1984

N2 - The adhesion of thin films of gold, sputter deposited onto silicon, is shown to be improved by subsequent irradiation with 5-30-keV electrons. The similarities between electron and heavy ion irradiation effects suggest a common (electronic) origin for the change in interfacial bonding.

AB - The adhesion of thin films of gold, sputter deposited onto silicon, is shown to be improved by subsequent irradiation with 5-30-keV electrons. The similarities between electron and heavy ion irradiation effects suggest a common (electronic) origin for the change in interfacial bonding.

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U2 - 10.1063/1.94705

DO - 10.1063/1.94705

M3 - Article

AN - SCOPUS:0021120979

SN - 0003-6951

VL - 44

SP - 193

EP - 195

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Thin-film adhesion changes induced by electron irradiation

Abstract

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