Abstract
The adhesion of thin films of gold, sputter deposited onto silicon, is shown to be improved by subsequent irradiation with 5-30-keV electrons. The similarities between electron and heavy ion irradiation effects suggest a common (electronic) origin for the change in interfacial bonding.
| Original language | English |
|---|---|
| Pages (from-to) | 193-195 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 44 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1984 |
| Externally published | Yes |
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