Thin film deposition of Ge33As12Se55 by pulsed laser deposition and thermal evaporation: Comparison of properties

R. A. Jarvis; R. P. Wang; A. V. Rode; C. Zha; B. Luther-Davies

doi:10.1016/j.jnoncrysol.2006.12.079

Thin film deposition of Ge₃₃As₁₂Se₅₅ by pulsed laser deposition and thermal evaporation: Comparison of properties

R. A. Jarvis^*, R. P. Wang, A. V. Rode, C. Zha, B. Luther-Davies

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Thin films of Ge₃₃As₁₂Se₅₅ were produced using two deposition techniques, ultra-fast pulsed laser deposition (UFPLD) and thermal evaporation (TE), and their properties have been investigated. The chemical composition of the UFPLD films was virtually identical to the composition of the chalcogenide glass targets, whereas the composition of films deposited by TE was significantly different from the target material. Heating of the substrate with a temperature gradient during deposition produced a gradient in composition in both UFPLD and TE films.

Original language	English
Pages (from-to)	947-949
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	353
Issue number	8-10
DOIs	https://doi.org/10.1016/j.jnoncrysol.2006.12.079
Publication status	Published - 15 Apr 2007

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title = "Thin film deposition of Ge33As12Se55 by pulsed laser deposition and thermal evaporation: Comparison of properties",

abstract = "Thin films of Ge33As12Se55 were produced using two deposition techniques, ultra-fast pulsed laser deposition (UFPLD) and thermal evaporation (TE), and their properties have been investigated. The chemical composition of the UFPLD films was virtually identical to the composition of the chalcogenide glass targets, whereas the composition of films deposited by TE was significantly different from the target material. Heating of the substrate with a temperature gradient during deposition produced a gradient in composition in both UFPLD and TE films.",

keywords = "Chalcogenides, Composition, Dielectric properties, GeAsSe, Laser deposition, Raman spectroscopy, Thermal evaporation, Thin films",

author = "Jarvis, {R. A.} and Wang, {R. P.} and Rode, {A. V.} and C. Zha and B. Luther-Davies",

year = "2007",

month = apr,

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doi = "10.1016/j.jnoncrysol.2006.12.079",

language = "English",

volume = "353",

pages = "947--949",

journal = "Journal of Non-Crystalline Solids",

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TY - JOUR

T1 - Thin film deposition of Ge33As12Se55 by pulsed laser deposition and thermal evaporation

T2 - Comparison of properties

AU - Jarvis, R. A.

AU - Wang, R. P.

AU - Rode, A. V.

AU - Zha, C.

AU - Luther-Davies, B.

PY - 2007/4/15

Y1 - 2007/4/15

N2 - Thin films of Ge33As12Se55 were produced using two deposition techniques, ultra-fast pulsed laser deposition (UFPLD) and thermal evaporation (TE), and their properties have been investigated. The chemical composition of the UFPLD films was virtually identical to the composition of the chalcogenide glass targets, whereas the composition of films deposited by TE was significantly different from the target material. Heating of the substrate with a temperature gradient during deposition produced a gradient in composition in both UFPLD and TE films.

AB - Thin films of Ge33As12Se55 were produced using two deposition techniques, ultra-fast pulsed laser deposition (UFPLD) and thermal evaporation (TE), and their properties have been investigated. The chemical composition of the UFPLD films was virtually identical to the composition of the chalcogenide glass targets, whereas the composition of films deposited by TE was significantly different from the target material. Heating of the substrate with a temperature gradient during deposition produced a gradient in composition in both UFPLD and TE films.

KW - Chalcogenides

KW - Composition

KW - Dielectric properties

KW - GeAsSe

KW - Laser deposition

KW - Raman spectroscopy

KW - Thermal evaporation

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=33947216810&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2006.12.079

DO - 10.1016/j.jnoncrysol.2006.12.079

M3 - Article

SN - 0022-3093

VL - 353

SP - 947

EP - 949

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 8-10

ER -

Thin film deposition of Ge₃₃As₁₂Se₅₅ by pulsed laser deposition and thermal evaporation: Comparison of properties

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