Thin macroporous silicon heterojunction solar cells

Marco Ernst; Rolf Brendel; Rafel Ferré; Nils Peter Harder

doi:10.1002/pssr.201206113

Thin macroporous silicon heterojunction solar cells

Marco Ernst^*, Rolf Brendel, Rafel Ferré, Nils Peter Harder

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We demonstrate the processing of a heterojunction solar cell from a purely macroporous silicon (MacPSi) absorber that is generated and separated from a monocrystalline n-type Cz silicon wafer by means of electrochemical etching. The etching procedure results in straight pores with a diameter of (4.7 ± 0.2) μm and a distance of 8.3 μm. An intrinsic amorphous Si (a-Si)/p ⁺-type a-Si/indium tin oxide (ITO) layer stack is on the front side and an intrinsic a-Si/n ⁺-type a-Si/ITO layer stack is on the rear side. The pores are open when depositing the layers onto the 3.92 cm ²-sized cell. The conductive layers do not cause shunting through the pores. A silicon oxide layer passivates the pore walls. The energy-conversion efficiency of the (33 ± 2) μm thick cell is 7.2%. (

Original language	English
Pages (from-to)	187-189
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	6
Issue number	5
DOIs	https://doi.org/10.1002/pssr.201206113
Publication status	Published - May 2012
Externally published	Yes

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title = "Thin macroporous silicon heterojunction solar cells",

abstract = "We demonstrate the processing of a heterojunction solar cell from a purely macroporous silicon (MacPSi) absorber that is generated and separated from a monocrystalline n-type Cz silicon wafer by means of electrochemical etching. The etching procedure results in straight pores with a diameter of (4.7 ± 0.2) μm and a distance of 8.3 μm. An intrinsic amorphous Si (a-Si)/p +-type a-Si/indium tin oxide (ITO) layer stack is on the front side and an intrinsic a-Si/n +-type a-Si/ITO layer stack is on the rear side. The pores are open when depositing the layers onto the 3.92 cm 2-sized cell. The conductive layers do not cause shunting through the pores. A silicon oxide layer passivates the pore walls. The energy-conversion efficiency of the (33 ± 2) μm thick cell is 7.2%. (",

keywords = "Heterojunctions, Kerf-free technologies, Layer transfer, Macroporous silicon, Monocrystalline wafers, Thin films",

author = "Marco Ernst and Rolf Brendel and Rafel Ferr{\'e} and Harder, {Nils Peter}",

year = "2012",

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journal = "Physica Status Solidi - Rapid Research Letters",

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T1 - Thin macroporous silicon heterojunction solar cells

AU - Ernst, Marco

AU - Brendel, Rolf

AU - Ferré, Rafel

AU - Harder, Nils Peter

PY - 2012/5

Y1 - 2012/5

N2 - We demonstrate the processing of a heterojunction solar cell from a purely macroporous silicon (MacPSi) absorber that is generated and separated from a monocrystalline n-type Cz silicon wafer by means of electrochemical etching. The etching procedure results in straight pores with a diameter of (4.7 ± 0.2) μm and a distance of 8.3 μm. An intrinsic amorphous Si (a-Si)/p +-type a-Si/indium tin oxide (ITO) layer stack is on the front side and an intrinsic a-Si/n +-type a-Si/ITO layer stack is on the rear side. The pores are open when depositing the layers onto the 3.92 cm 2-sized cell. The conductive layers do not cause shunting through the pores. A silicon oxide layer passivates the pore walls. The energy-conversion efficiency of the (33 ± 2) μm thick cell is 7.2%. (

AB - We demonstrate the processing of a heterojunction solar cell from a purely macroporous silicon (MacPSi) absorber that is generated and separated from a monocrystalline n-type Cz silicon wafer by means of electrochemical etching. The etching procedure results in straight pores with a diameter of (4.7 ± 0.2) μm and a distance of 8.3 μm. An intrinsic amorphous Si (a-Si)/p +-type a-Si/indium tin oxide (ITO) layer stack is on the front side and an intrinsic a-Si/n +-type a-Si/ITO layer stack is on the rear side. The pores are open when depositing the layers onto the 3.92 cm 2-sized cell. The conductive layers do not cause shunting through the pores. A silicon oxide layer passivates the pore walls. The energy-conversion efficiency of the (33 ± 2) μm thick cell is 7.2%. (

KW - Heterojunctions

KW - Kerf-free technologies

KW - Layer transfer

KW - Macroporous silicon

KW - Monocrystalline wafers

KW - Thin films

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U2 - 10.1002/pssr.201206113

DO - 10.1002/pssr.201206113

M3 - Article

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SP - 187

EP - 189

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 5

ER -

Thin macroporous silicon heterojunction solar cells

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