Three-dimensional write-read-erase memory bits by femtosecond laser pulses in photorefractive LiNbO3 crystals

Eugene G. Gamaly; Saulius Juodkazis; Vygantas Mizeikis; Hiroaki Misawa; Andrei V. Rode; Wieslaw Z. Krolikowski; Kenji Kitamura

doi:10.1016/j.cap.2007.10.072

Three-dimensional write-read-erase memory bits by femtosecond laser pulses in photorefractive LiNbO₃ crystals

Eugene G. Gamaly^*
, Saulius Juodkazis
, Vygantas Mizeikis
, Hiroaki Misawa
, Andrei V. Rode
, Wieslaw Z. Krolikowski
, Kenji Kitamura

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We report on a three-dimensional single-shot optical recording by 150 fs pulses at 800 nm wavelength in Fe-doped and stoichiometric undoped LiNbO₃. The highest refractive index modulation of ∼10^-3 per single pulse has been achieved at close to the dielectric breakdown irradiance of ∼TW/cm², and was found to be independent of polarization of the writing beam. The quasi-permanent and rewritable bits have been demonstrated in Fe-doped LiNbO₃. Recording in undoped stoichiometric LiNbO₃ was of transient nature with full optical contrast recovery on a 0.1-1 s scale. The observed refractive index modulation is explainable by the photovoltaic effect in LiNbO₃.

Original language	English
Pages (from-to)	416-419
Number of pages	4
Journal	Current Applied Physics
Volume	8
Issue number	3-4
DOIs	https://doi.org/10.1016/j.cap.2007.10.072
Publication status	Published - May 2008

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title = "Three-dimensional write-read-erase memory bits by femtosecond laser pulses in photorefractive LiNbO3 crystals",

abstract = "We report on a three-dimensional single-shot optical recording by 150 fs pulses at 800 nm wavelength in Fe-doped and stoichiometric undoped LiNbO3. The highest refractive index modulation of ∼10-3 per single pulse has been achieved at close to the dielectric breakdown irradiance of ∼TW/cm2, and was found to be independent of polarization of the writing beam. The quasi-permanent and rewritable bits have been demonstrated in Fe-doped LiNbO3. Recording in undoped stoichiometric LiNbO3 was of transient nature with full optical contrast recovery on a 0.1-1 s scale. The observed refractive index modulation is explainable by the photovoltaic effect in LiNbO3.",

keywords = "42.50Gy, 77.84Dy, 78.20Bh, 78.47+p, Femtosecond laser microfabrication, Lithium niobate, Photovoltaic effect, Three-dimensional optical memory",

author = "Gamaly, \{Eugene G.\} and Saulius Juodkazis and Vygantas Mizeikis and Hiroaki Misawa and Rode, \{Andrei V.\} and Krolikowski, \{Wieslaw Z.\} and Kenji Kitamura",

year = "2008",

month = may,

doi = "10.1016/j.cap.2007.10.072",

language = "English",

volume = "8",

pages = "416--419",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "3-4",

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TY - JOUR

T1 - Three-dimensional write-read-erase memory bits by femtosecond laser pulses in photorefractive LiNbO3 crystals

AU - Gamaly, Eugene G.

AU - Juodkazis, Saulius

AU - Mizeikis, Vygantas

AU - Misawa, Hiroaki

AU - Rode, Andrei V.

AU - Krolikowski, Wieslaw Z.

AU - Kitamura, Kenji

PY - 2008/5

Y1 - 2008/5

N2 - We report on a three-dimensional single-shot optical recording by 150 fs pulses at 800 nm wavelength in Fe-doped and stoichiometric undoped LiNbO3. The highest refractive index modulation of ∼10-3 per single pulse has been achieved at close to the dielectric breakdown irradiance of ∼TW/cm2, and was found to be independent of polarization of the writing beam. The quasi-permanent and rewritable bits have been demonstrated in Fe-doped LiNbO3. Recording in undoped stoichiometric LiNbO3 was of transient nature with full optical contrast recovery on a 0.1-1 s scale. The observed refractive index modulation is explainable by the photovoltaic effect in LiNbO3.

AB - We report on a three-dimensional single-shot optical recording by 150 fs pulses at 800 nm wavelength in Fe-doped and stoichiometric undoped LiNbO3. The highest refractive index modulation of ∼10-3 per single pulse has been achieved at close to the dielectric breakdown irradiance of ∼TW/cm2, and was found to be independent of polarization of the writing beam. The quasi-permanent and rewritable bits have been demonstrated in Fe-doped LiNbO3. Recording in undoped stoichiometric LiNbO3 was of transient nature with full optical contrast recovery on a 0.1-1 s scale. The observed refractive index modulation is explainable by the photovoltaic effect in LiNbO3.

KW - 42.50Gy

KW - 77.84Dy

KW - 78.20Bh

KW - 78.47+p

KW - Femtosecond laser microfabrication

KW - Lithium niobate

KW - Photovoltaic effect

KW - Three-dimensional optical memory

UR - https://www.scopus.com/pages/publications/38649095208

U2 - 10.1016/j.cap.2007.10.072

DO - 10.1016/j.cap.2007.10.072

M3 - Article

SN - 1567-1739

VL - 8

SP - 416

EP - 419

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3-4

ER -

Three-dimensional write-read-erase memory bits by femtosecond laser pulses in photorefractive LiNbO₃ crystals

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