Ti/Ni/Au contacts to n-SiC after low energy implantation

Patrick W. Leech; Anthony S. Holland; Geoffrey K. Reeves; Yue Pan; Mark Ridgway; Phillip Tanner

doi:10.1016/j.matlet.2015.12.036

Ti/Ni/Au contacts to n-SiC after low energy implantation

Patrick W. Leech^*, Anthony S. Holland, Geoffrey K. Reeves, Yue Pan, Mark Ridgway, Phillip Tanner

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effect of low energy implantation of P or C ions in 3 C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 10¹³-10¹⁵ ions/cm². Measurements of specific contact resistance, ρ_c, were performed using the two-contact circular test structure. The magnitude of ρ_c for the Ti/Ni/Au contacts on unimplanted SiC was 1.29×10^-6 Ω cm². The value of ρ_c increased significantly at an implant dose of 1×10¹⁵ ions/cm². The dependence of R_sh and ρ_c on ion dose has been measured using both C and P implant species.

Original language	English
Pages (from-to)	39-42
Number of pages	4
Journal	Materials Letters
Volume	166
DOIs	https://doi.org/10.1016/j.matlet.2015.12.036
Publication status	Published - 1 Mar 2016

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title = "Ti/Ni/Au contacts to n-SiC after low energy implantation",

abstract = "The effect of low energy implantation of P or C ions in 3 C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two-contact circular test structure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was 1.29×10-6 Ω cm2. The value of ρc increased significantly at an implant dose of 1×1015 ions/cm2. The dependence of Rsh and ρc on ion dose has been measured using both C and P implant species.",

keywords = "Ion dose, Low energy implantation, Sic, Specific contact resistance, Ti/Ni/Au",

author = "Leech, {Patrick W.} and Holland, {Anthony S.} and Reeves, {Geoffrey K.} and Yue Pan and Mark Ridgway and Phillip Tanner",

note = "Publisher Copyright: {\textcopyright} 2015 Published by Elsevier B.V.",

year = "2016",

month = mar,

day = "1",

doi = "10.1016/j.matlet.2015.12.036",

language = "English",

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journal = "Materials Letters",

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TY - JOUR

T1 - Ti/Ni/Au contacts to n-SiC after low energy implantation

AU - Leech, Patrick W.

AU - Holland, Anthony S.

AU - Reeves, Geoffrey K.

AU - Pan, Yue

AU - Ridgway, Mark

AU - Tanner, Phillip

PY - 2016/3/1

Y1 - 2016/3/1

N2 - The effect of low energy implantation of P or C ions in 3 C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two-contact circular test structure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was 1.29×10-6 Ω cm2. The value of ρc increased significantly at an implant dose of 1×1015 ions/cm2. The dependence of Rsh and ρc on ion dose has been measured using both C and P implant species.

AB - The effect of low energy implantation of P or C ions in 3 C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two-contact circular test structure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was 1.29×10-6 Ω cm2. The value of ρc increased significantly at an implant dose of 1×1015 ions/cm2. The dependence of Rsh and ρc on ion dose has been measured using both C and P implant species.

KW - Ion dose

KW - Low energy implantation

KW - Sic

KW - Specific contact resistance

KW - Ti/Ni/Au

UR - http://www.scopus.com/inward/record.url?scp=84949844449&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2015.12.036

DO - 10.1016/j.matlet.2015.12.036

M3 - Article

SN - 0167-577X

VL - 166

SP - 39

EP - 42

JO - Materials Letters

JF - Materials Letters

ER -

Ti/Ni/Au contacts to n-SiC after low energy implantation

Abstract

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