TOWARDS A 700 mV SILICON SOLAR CELL.

Martin A. Green; A. W. Blakers; E. Gauja; Michael R. Willison; Ted Szpitalak

TOWARDS A 700 mV SILICON SOLAR CELL.

Martin A. Green^*, A. W. Blakers, E. Gauja, Michael R. Willison, Ted Szpitalak

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Conference article › peer-review

21 Citations (Scopus)

Abstract

The key to improved silicon solar cell performance lies in increasing cell open circuit voltage. Not only does improved voltage direclty increase cell efficiency, but it also increases the limiting value of fill factor and decreases the temperature sensitivity of the cell. Limits on attainable open circuit voltage are not well defined. A thermodynamic limit of 850 mV exists for black body silicon cells, with 700 mV long regarded as a practical limit. This paper describes experimental work which has resulted in experimental devices with open circuit voltages approaching 700 mV. Values up to 694 (AM0, 25 C) have been demonstrated. The cells are similar in structure to conventional p-n junction cells, but particular attention is paid to passivating the entire top surface of the cell, including regions under the top contact

Original language	English
Pages (from-to)	1219-1222
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Publication status	Published - 1982

Cite this

@article{c3b26e6be6314a41a45acaf3d02fda6d,

title = "TOWARDS A 700 mV SILICON SOLAR CELL.",

abstract = "The key to improved silicon solar cell performance lies in increasing cell open circuit voltage. Not only does improved voltage direclty increase cell efficiency, but it also increases the limiting value of fill factor and decreases the temperature sensitivity of the cell. Limits on attainable open circuit voltage are not well defined. A thermodynamic limit of 850 mV exists for black body silicon cells, with 700 mV long regarded as a practical limit. This paper describes experimental work which has resulted in experimental devices with open circuit voltages approaching 700 mV. Values up to 694 (AM0, 25 C) have been demonstrated. The cells are similar in structure to conventional p-n junction cells, but particular attention is paid to passivating the entire top surface of the cell, including regions under the top contact",

author = "Green, {Martin A.} and Blakers, {A. W.} and E. Gauja and Willison, {Michael R.} and Ted Szpitalak",

year = "1982",

language = "English",

pages = "1219--1222",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - TOWARDS A 700 mV SILICON SOLAR CELL.

AU - Green, Martin A.

AU - Blakers, A. W.

AU - Gauja, E.

AU - Willison, Michael R.

AU - Szpitalak, Ted

PY - 1982

Y1 - 1982

N2 - The key to improved silicon solar cell performance lies in increasing cell open circuit voltage. Not only does improved voltage direclty increase cell efficiency, but it also increases the limiting value of fill factor and decreases the temperature sensitivity of the cell. Limits on attainable open circuit voltage are not well defined. A thermodynamic limit of 850 mV exists for black body silicon cells, with 700 mV long regarded as a practical limit. This paper describes experimental work which has resulted in experimental devices with open circuit voltages approaching 700 mV. Values up to 694 (AM0, 25 C) have been demonstrated. The cells are similar in structure to conventional p-n junction cells, but particular attention is paid to passivating the entire top surface of the cell, including regions under the top contact

AB - The key to improved silicon solar cell performance lies in increasing cell open circuit voltage. Not only does improved voltage direclty increase cell efficiency, but it also increases the limiting value of fill factor and decreases the temperature sensitivity of the cell. Limits on attainable open circuit voltage are not well defined. A thermodynamic limit of 850 mV exists for black body silicon cells, with 700 mV long regarded as a practical limit. This paper describes experimental work which has resulted in experimental devices with open circuit voltages approaching 700 mV. Values up to 694 (AM0, 25 C) have been demonstrated. The cells are similar in structure to conventional p-n junction cells, but particular attention is paid to passivating the entire top surface of the cell, including regions under the top contact

UR - http://www.scopus.com/inward/record.url?scp=0020259119&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0020259119

SN - 0160-8371

SP - 1219

EP - 1222

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

ER -

TOWARDS A 700 mV SILICON SOLAR CELL.

Abstract

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