Towards a better understanding of the operative mechanisms underlying impurity-free disordering of GaAs: Effect of stress

Sachin Doshi, Prakash N.K. Deenapanray*, H. H. Tan, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)

    Abstract

    The effect of stress on defect creation and diffusion in impurity-free disordered n-GaAs epilayers capped with SiOx layers was studied. Both the oxygen content of the plasma-enhanced chemical vapor deposited SiOx layer and the stress that it imposes onto the GaAs epilayer were changed by varying the nitrous oxide flow rate, N. The results were explained by accounting for the effect of stress imposed by the SiOx layers onto the n-GaAs epilayers.

    Original languageEnglish
    Pages (from-to)198-203
    Number of pages6
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume21
    Issue number1 SPEC.
    DOIs
    Publication statusPublished - Jan 2003

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