Abstract
The effect of stress on defect creation and diffusion in impurity-free disordered n-GaAs epilayers capped with SiOx layers was studied. Both the oxygen content of the plasma-enhanced chemical vapor deposited SiOx layer and the stress that it imposes onto the GaAs epilayer were changed by varying the nitrous oxide flow rate, N. The results were explained by accounting for the effect of stress imposed by the SiOx layers onto the n-GaAs epilayers.
Original language | English |
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Pages (from-to) | 198-203 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 21 |
Issue number | 1 SPEC. |
DOIs | |
Publication status | Published - Jan 2003 |