Abstract
Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a solid-to-liquid phase transformation, the volume contraction necessary to accommodate the high-density molten phase produces voids, potentially the precursors to porosity, along the ion direction. Their bow-tie shape, reproduced by simulation, results from radially inward resolidification.
Original language | English |
---|---|
Article number | 245502 |
Journal | Physical Review Letters |
Volume | 110 |
Issue number | 24 |
DOIs | |
Publication status | Published - 14 Jun 2013 |