Abstract
Structures consisting of uniform types of resistive and dielectric materials for the realization of tarnsfer functions are investigated. It is shown through the use of dimensional analysis that the transfer function sensitivity depends only upon the transfer function and not upon the realization configuration. An interpretation through the Bode plot shows that sharp cut-off leads to high sensitivity.
Original language | English |
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Pages (from-to) | 341-344 |
Number of pages | 4 |
Journal | Microelectronics Reliability |
Volume | 9 |
Issue number | 4 |
DOIs | |
Publication status | Published - Jul 1970 |
Externally published | Yes |