Transfer function sensitivity for discrete and integrated circuits

R. W. Newcomb*, B. D.O. Anderson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Structures consisting of uniform types of resistive and dielectric materials for the realization of tarnsfer functions are investigated. It is shown through the use of dimensional analysis that the transfer function sensitivity depends only upon the transfer function and not upon the realization configuration. An interpretation through the Bode plot shows that sharp cut-off leads to high sensitivity.

Original languageEnglish
Pages (from-to)341-344
Number of pages4
JournalMicroelectronics Reliability
Volume9
Issue number4
DOIs
Publication statusPublished - Jul 1970
Externally publishedYes

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