Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication

Benoit Guilhabert; Antonio Hurtado; Dimitars Jevtics; Qian Gao; Hark Hoe Tan; Chennupati Jagadish; Martin D. Dawson

doi:10.1021/acsnano.5b07752

Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication

Benoit Guilhabert, Antonio Hurtado^*, Dimitars Jevtics, Qian Gao, Hark Hoe Tan, Chennupati Jagadish, Martin D. Dawson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

Accurate positioning and organization of indium phosphide (InP) nanowires (NWs) with lasing emission at room temperature is achieved using a nanoscale transfer printing (TP) technique. The NWs retained their lasing emission after their transfer to targeted locations on different receiving substrates (e.g., polymers, silica, and metal surfaces). The NWs were also organized into complex spatial patterns, including 1D and 2D arrays, with a controlled number of elements and dimensions. The developed TP technique enables the fabrication of bespoke nanophotonic systems using NW lasers and other NW devices as building blocks.

Original language	English
Pages (from-to)	3951-3958
Number of pages	8
Journal	ACS Nano
Volume	10
Issue number	4
DOIs	https://doi.org/10.1021/acsnano.5b07752
Publication status	Published - 26 Apr 2016

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abstract = "Accurate positioning and organization of indium phosphide (InP) nanowires (NWs) with lasing emission at room temperature is achieved using a nanoscale transfer printing (TP) technique. The NWs retained their lasing emission after their transfer to targeted locations on different receiving substrates (e.g., polymers, silica, and metal surfaces). The NWs were also organized into complex spatial patterns, including 1D and 2D arrays, with a controlled number of elements and dimensions. The developed TP technique enables the fabrication of bespoke nanophotonic systems using NW lasers and other NW devices as building blocks.",

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author = "Benoit Guilhabert and Antonio Hurtado and Dimitars Jevtics and Qian Gao and Tan, {Hark Hoe} and Chennupati Jagadish and Dawson, {Martin D.}",

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T1 - Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication

AU - Guilhabert, Benoit

AU - Hurtado, Antonio

AU - Jevtics, Dimitars

AU - Gao, Qian

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

AU - Dawson, Martin D.

PY - 2016/4/26

Y1 - 2016/4/26

N2 - Accurate positioning and organization of indium phosphide (InP) nanowires (NWs) with lasing emission at room temperature is achieved using a nanoscale transfer printing (TP) technique. The NWs retained their lasing emission after their transfer to targeted locations on different receiving substrates (e.g., polymers, silica, and metal surfaces). The NWs were also organized into complex spatial patterns, including 1D and 2D arrays, with a controlled number of elements and dimensions. The developed TP technique enables the fabrication of bespoke nanophotonic systems using NW lasers and other NW devices as building blocks.

AB - Accurate positioning and organization of indium phosphide (InP) nanowires (NWs) with lasing emission at room temperature is achieved using a nanoscale transfer printing (TP) technique. The NWs retained their lasing emission after their transfer to targeted locations on different receiving substrates (e.g., polymers, silica, and metal surfaces). The NWs were also organized into complex spatial patterns, including 1D and 2D arrays, with a controlled number of elements and dimensions. The developed TP technique enables the fabrication of bespoke nanophotonic systems using NW lasers and other NW devices as building blocks.

KW - nanophotonics

KW - nanowire lasers

KW - photonic integration

KW - transfer printing

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JF - ACS Nano

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Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication

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