Transient terahertz conductivity of GaAs nanowires

Patrick Parkinson; James Lloyd-Hughes; Qiang Gao; H. Hoe Tan; Chennupati Jagadish; Michael B. Johnston; Laura M. Herz

doi:10.1021/nl071162x

Transient terahertz conductivity of GaAs nanowires

Patrick Parkinson, James Lloyd-Hughes, Qiang Gao, H. Hoe Tan, Chennupati Jagadish, Michael B. Johnston^*, Laura M. Herz

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

205 Citations (Scopus)

Abstract

The time-resolved conductivity of isolated GaAs nanowires is investigated by optical-pump terahertz-probe time-domain spectroscopy. The electronic response exhibits a pronounced surface plasmon mode that forms within 300 fs before decaying within 10 ps as a result of charge trapping at the nanowire surface. The mobility is extracted using the Drude model for a plasmon and found to be remarkably high, being roughly one-third of that typical for bulk GaAs at room temperature.

Original language	English
Pages (from-to)	2162-2165
Number of pages	4
Journal	Nano Letters
Volume	7
Issue number	7
DOIs	https://doi.org/10.1021/nl071162x
Publication status	Published - Jul 2007

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AU - Gao, Qiang

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AU - Jagadish, Chennupati

AU - Johnston, Michael B.

AU - Herz, Laura M.

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AB - The time-resolved conductivity of isolated GaAs nanowires is investigated by optical-pump terahertz-probe time-domain spectroscopy. The electronic response exhibits a pronounced surface plasmon mode that forms within 300 fs before decaying within 10 ps as a result of charge trapping at the nanowire surface. The mobility is extracted using the Drude model for a plasmon and found to be remarkably high, being roughly one-third of that typical for bulk GaAs at room temperature.

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Transient terahertz conductivity of GaAs nanowires

Abstract

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