Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon

J. E. Bradby, J. S. Williams, J. Wong-Leung, M. V. Swain, P. Munroe

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    203 Citations (Scopus)

    Abstract

    Spherical indentation of crystalline silicon has been studied using cross-sectional transmission electron microscopy (XTEM). Indentation loads were chosen below and above the yield point for silicon to investigate the modes of plastic deformation. Slip planes are visible in the XTEM micrographs in both indentation loads studied. A thin layer of polycrystalline material has been identified (indexed as Si-XII from diffraction patterns) on the low-load indentation. The higher-load indentation revealed a large region of amorphous silicon. The sequence of structural deformation by indentation in silicon has been observed with the initial deformation mechanism being slip until phase transformations can take place.

    Original languageEnglish
    Pages (from-to)3749-3751
    Number of pages3
    JournalApplied Physics Letters
    Volume77
    Issue number23
    DOIs
    Publication statusPublished - 4 Dec 2000

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