TY - JOUR
T1 - Transmission-electron microscopy study of the shape of buried quantum dots
T2 - InxGa12xAs/GaAs quantum dots
AU - Liao, X.
AU - Zou, J.
AU - Duan, X.
AU - Cockayne, D.
AU - Leon, R.
AU - Lobo, C.
PY - 1998
Y1 - 1998
N2 - High-resolution electron microscopy, on-zone bright-field imaging, and image simulation were used to investigate the shape of capped (Formula presented) semiconductor quantum dots. Cross-section 〈110〉 high-resolution images suggest that the quantum dots are lens shaped, while the [001] on-zone bright-field images show a contrast that suggests a quantum dot morphology with four edges parallel to 〈100〉. The image simulation, however, suggests that a spherical quantum dot can produce a square-shaped image. These observations lead to the conclusion that the quantum dots in buried (Formula presented) semiconductor heterostructures are lens shaped.
AB - High-resolution electron microscopy, on-zone bright-field imaging, and image simulation were used to investigate the shape of capped (Formula presented) semiconductor quantum dots. Cross-section 〈110〉 high-resolution images suggest that the quantum dots are lens shaped, while the [001] on-zone bright-field images show a contrast that suggests a quantum dot morphology with four edges parallel to 〈100〉. The image simulation, however, suggests that a spherical quantum dot can produce a square-shaped image. These observations lead to the conclusion that the quantum dots in buried (Formula presented) semiconductor heterostructures are lens shaped.
UR - http://www.scopus.com/inward/record.url?scp=0001459203&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.58.R4235
DO - 10.1103/PhysRevB.58.R4235
M3 - Review article
SN - 1098-0121
VL - 58
SP - R4235-R4237
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 8
ER -