Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy

Adam Babiński; J. Siwiec-Matuszyk; J. M. Baranowski; G. Li; C. Jagadish

doi:10.1063/1.1289035

Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In_0.2Ga_0.8As/Al_0.2Ga_0.8As quantum well grown by metalorganic vapor phase epitaxy

Adam Babiński^*, J. Siwiec-Matuszyk, J. M. Baranowski, G. Li, C. Jagadish

^*Corresponding author for this work

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Abstract

A study of transport and quantum mobility of electrons in two-dimensional electron gas (2DEG) in the modulation Si δ-doped pseudomorphic GaAs/In_0.2Ga_0.8As/Al_0.2Ga_0.8As quantum well (QW) grown by metalorganic vapor phase epitaxy is presented. Well-resolved Shubnikov-de Haas oscillations of the magnetoresistivity observed at T=4.2 K suggest that the 2DEG with high electron mobility (μ₁ ≈ 46 000 cm²/V s) formed in the QW with no significant parallel conduction. A persistent photoconductivity effect resulted in an increase in electron sheet density. An increase of transport and quantum mobilities up to the onset of the second subband occupancy was observed. Further illumination resulted in a decrease of both mobilities. Strong dependence of the quantum mobility on the thermal history of the investigated sample was attributed to the effect of actual distribution of ionized centers in the sample.

Original language	English
Pages (from-to)	999-1001
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	7
DOIs	https://doi.org/10.1063/1.1289035
Publication status	Published - 14 Aug 2000

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@article{294dc9ec128347d09d8f78783a134dff,

title = "Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy",

abstract = "A study of transport and quantum mobility of electrons in two-dimensional electron gas (2DEG) in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well (QW) grown by metalorganic vapor phase epitaxy is presented. Well-resolved Shubnikov-de Haas oscillations of the magnetoresistivity observed at T=4.2 K suggest that the 2DEG with high electron mobility (μ1 ≈ 46 000 cm2/V s) formed in the QW with no significant parallel conduction. A persistent photoconductivity effect resulted in an increase in electron sheet density. An increase of transport and quantum mobilities up to the onset of the second subband occupancy was observed. Further illumination resulted in a decrease of both mobilities. Strong dependence of the quantum mobility on the thermal history of the investigated sample was attributed to the effect of actual distribution of ionized centers in the sample.",

author = "Adam Babi{\'n}ski and J. Siwiec-Matuszyk and Baranowski, {J. M.} and G. Li and C. Jagadish",

year = "2000",

month = aug,

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doi = "10.1063/1.1289035",

language = "English",

volume = "77",

pages = "999--1001",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In_0.2Ga_0.8As/Al_0.2Ga_0.8As quantum well grown by metalorganic vapor phase epitaxy. / Babiński, Adam; Siwiec-Matuszyk, J.; Baranowski, J. M. et al.
In: Applied Physics Letters, Vol. 77, No. 7, 14.08.2000, p. 999-1001.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy

AU - Babiński, Adam

AU - Siwiec-Matuszyk, J.

AU - Baranowski, J. M.

AU - Li, G.

AU - Jagadish, C.

PY - 2000/8/14

Y1 - 2000/8/14

N2 - A study of transport and quantum mobility of electrons in two-dimensional electron gas (2DEG) in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well (QW) grown by metalorganic vapor phase epitaxy is presented. Well-resolved Shubnikov-de Haas oscillations of the magnetoresistivity observed at T=4.2 K suggest that the 2DEG with high electron mobility (μ1 ≈ 46 000 cm2/V s) formed in the QW with no significant parallel conduction. A persistent photoconductivity effect resulted in an increase in electron sheet density. An increase of transport and quantum mobilities up to the onset of the second subband occupancy was observed. Further illumination resulted in a decrease of both mobilities. Strong dependence of the quantum mobility on the thermal history of the investigated sample was attributed to the effect of actual distribution of ionized centers in the sample.

AB - A study of transport and quantum mobility of electrons in two-dimensional electron gas (2DEG) in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well (QW) grown by metalorganic vapor phase epitaxy is presented. Well-resolved Shubnikov-de Haas oscillations of the magnetoresistivity observed at T=4.2 K suggest that the 2DEG with high electron mobility (μ1 ≈ 46 000 cm2/V s) formed in the QW with no significant parallel conduction. A persistent photoconductivity effect resulted in an increase in electron sheet density. An increase of transport and quantum mobilities up to the onset of the second subband occupancy was observed. Further illumination resulted in a decrease of both mobilities. Strong dependence of the quantum mobility on the thermal history of the investigated sample was attributed to the effect of actual distribution of ionized centers in the sample.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In_0.2Ga_0.8As/Al_0.2Ga_0.8As quantum well grown by metalorganic vapor phase epitaxy

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