Trap-Limited Migration of Vacancy-Type Defects in 7.5 keV H--Implanted Si

Prakash N.K. Deenapanray

doi:10.1063/1.1456952

Trap-Limited Migration of Vacancy-Type Defects in 7.5 keV H^--Implanted Si

Prakash N.K. Deenapanray

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7 Citations (Scopus)

Abstract

We have investigated the generation and migration of defects in crystalline Si following their introduction at room temperature by low-energy hydrogen ions in a region confined to the near-surface region. The fluence dependence of free carrier compensation and creation of electrically active defects in the n-type samples was monitored by capacitance-voltage and deep level transient spectroscopy measurements, respectively. The defects were responsible for free carrier compensation to depths exceeding ∼1 μm beyond the top ∼0.25 μm region of samples where they were generated. We describe a close relationship between generation of the VO-H complex and the VP pair on the free carrier compensation.

Original language	English
Pages (from-to)	1577-1579
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	9
DOIs	https://doi.org/10.1063/1.1456952
Publication status	Published - 2002

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abstract = "We have investigated the generation and migration of defects in crystalline Si following their introduction at room temperature by low-energy hydrogen ions in a region confined to the near-surface region. The fluence dependence of free carrier compensation and creation of electrically active defects in the n-type samples was monitored by capacitance-voltage and deep level transient spectroscopy measurements, respectively. The defects were responsible for free carrier compensation to depths exceeding ∼1 μm beyond the top ∼0.25 μm region of samples where they were generated. We describe a close relationship between generation of the VO-H complex and the VP pair on the free carrier compensation.",

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AB - We have investigated the generation and migration of defects in crystalline Si following their introduction at room temperature by low-energy hydrogen ions in a region confined to the near-surface region. The fluence dependence of free carrier compensation and creation of electrically active defects in the n-type samples was monitored by capacitance-voltage and deep level transient spectroscopy measurements, respectively. The defects were responsible for free carrier compensation to depths exceeding ∼1 μm beyond the top ∼0.25 μm region of samples where they were generated. We describe a close relationship between generation of the VO-H complex and the VP pair on the free carrier compensation.

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DO - 10.1063/1.1456952

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JF - Applied Physics Letters

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Trap-Limited Migration of Vacancy-Type Defects in 7.5 keV H^--Implanted Si

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