Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering

J. A. Alexander-Webber*, C. K. Groschner, A. A. Sagade, S. Hofmann, H. H. Tan, C. Jagadish, H. J. Joyce

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Citation (Scopus)

    Abstract

    We report on individual-InAs nanowire optoelectronic devices which, through surfacestate engineering, can be tailored to exhibit either negative- or positive-photoconductivity, opening pathways towards engineering semiconductor nanowires for novel optical-memory and photodetector applications.

    Original languageEnglish
    Title of host publicationCLEO
    Subtitle of host publicationApplications and Technology, CLEO_AT 2017
    PublisherOptica Publishing Group
    ISBN (Print)9781943580279
    DOIs
    Publication statusPublished - 2017
    EventCLEO: Applications and Technology, CLEO_AT 2017 - San Jose, United States
    Duration: 14 May 201719 May 2017

    Publication series

    NameOptics InfoBase Conference Papers
    VolumePart F43-CLEO_AT 2017
    ISSN (Electronic)2162-2701

    Conference

    ConferenceCLEO: Applications and Technology, CLEO_AT 2017
    Country/TerritoryUnited States
    CitySan Jose
    Period14/05/1719/05/17

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