Skip to main navigation Skip to search Skip to main content

Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering

  • J. A. Alexander-Webber*
  • , C. K. Groschner
  • , A. A. Sagade
  • , S. Hofmann
  • , H. H. Tan
  • , C. Jagadish
  • , H. J. Joyce
  • *Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

    1 Citation (Scopus)

    Abstract

    We report on individual-InAs nanowire optoelectronic devices which, through surfacestate engineering, can be tailored to exhibit either negative- or positive-photoconductivity, opening pathways towards engineering semiconductor nanowires for novel optical-memory and photodetector applications.

    Original languageEnglish
    Title of host publicationCLEO
    Subtitle of host publicationApplications and Technology, CLEO_AT 2017
    PublisherOptica Publishing Group
    ISBN (Print)9781943580279
    DOIs
    Publication statusPublished - 2017
    EventCLEO: Applications and Technology, CLEO_AT 2017 - San Jose, United States
    Duration: 14 May 2017 → 19 May 2017

    Publication series

    NameOptics InfoBase Conference Papers
    VolumePart F43-CLEO_AT 2017
    ISSN (Electronic)2162-2701

    Conference

    ConferenceCLEO: Applications and Technology, CLEO_AT 2017
    Country/TerritoryUnited States
    CitySan Jose
    Period14/05/17 → 19/05/17

    Fingerprint

    Dive into the research topics of 'Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering'. Together they form a unique fingerprint.

    Cite this