Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering

J. A. Alexander-Webber; C. K. Groschner; A. A. Sagade; S. Hofmann; H. H. Tan; C. Jagadish; H. J. Joyce

doi:10.1364/CLEO_AT.2017.JTh2A.108

Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering

J. A. Alexander-Webber^*, C. K. Groschner, A. A. Sagade, S. Hofmann, H. H. Tan, C. Jagadish, H. J. Joyce

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

1 Citation (Scopus)

Abstract

We report on individual-InAs nanowire optoelectronic devices which, through surfacestate engineering, can be tailored to exhibit either negative- or positive-photoconductivity, opening pathways towards engineering semiconductor nanowires for novel optical-memory and photodetector applications.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Applications and Technology, CLEO_AT 2017
Publisher	Optica Publishing Group
ISBN (Print)	9781943580279
DOIs	https://doi.org/10.1364/CLEO_AT.2017.JTh2A.108
Publication status	Published - 2017
Event	CLEO: Applications and Technology, CLEO_AT 2017 - San Jose, United States Duration: 14 May 2017 → 19 May 2017

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F43-CLEO_AT 2017
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: Applications and Technology, CLEO_AT 2017
Country/Territory	United States
City	San Jose
Period	14/05/17 → 19/05/17

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10.1364/CLEO_AT.2017.JTh2A.108

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Alexander-Webber, J. A., Groschner, C. K., Sagade, A. A., Hofmann, S., Tan, H. H., Jagadish, C., & Joyce, H. J. (2017). Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering. In CLEO: Applications and Technology, CLEO_AT 2017 (Optics InfoBase Conference Papers; Vol. Part F43-CLEO_AT 2017). Optica Publishing Group. https://doi.org/10.1364/CLEO_AT.2017.JTh2A.108

@inproceedings{6db8a44269db46d797220b00f4801f1f,

title = "Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering",

abstract = "We report on individual-InAs nanowire optoelectronic devices which, through surfacestate engineering, can be tailored to exhibit either negative- or positive-photoconductivity, opening pathways towards engineering semiconductor nanowires for novel optical-memory and photodetector applications.",

author = "Alexander-Webber, \{J. A.\} and Groschner, \{C. K.\} and Sagade, \{A. A.\} and S. Hofmann and Tan, \{H. H.\} and C. Jagadish and Joyce, \{H. J.\}",

note = "Publisher Copyright: {\textcopyright} 2017 OSA.; CLEO: Applications and Technology, CLEO\_AT 2017 ; Conference date: 14-05-2017 Through 19-05-2017",

year = "2017",

doi = "10.1364/CLEO\_AT.2017.JTh2A.108",

language = "English",

isbn = "9781943580279",

series = "Optics InfoBase Conference Papers",

publisher = "Optica Publishing Group",

booktitle = "CLEO",

address = "United States",

}

Alexander-Webber, JA, Groschner, CK, Sagade, AA, Hofmann, S, Tan, HH , Jagadish, C & Joyce, HJ 2017, Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering. in CLEO: Applications and Technology, CLEO_AT 2017. Optics InfoBase Conference Papers, vol. Part F43-CLEO_AT 2017, Optica Publishing Group, CLEO: Applications and Technology, CLEO_AT 2017, San Jose, United States, 14/05/17. https://doi.org/10.1364/CLEO_AT.2017.JTh2A.108

Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering. / Alexander-Webber, J. A.; Groschner, C. K.; Sagade, A. A. et al.
CLEO: Applications and Technology, CLEO_AT 2017. Optica Publishing Group, 2017. (Optics InfoBase Conference Papers; Vol. Part F43-CLEO_AT 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

TY - GEN

T1 - Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering

AU - Alexander-Webber, J. A.

AU - Groschner, C. K.

AU - Sagade, A. A.

AU - Hofmann, S.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Joyce, H. J.

PY - 2017

Y1 - 2017

N2 - We report on individual-InAs nanowire optoelectronic devices which, through surfacestate engineering, can be tailored to exhibit either negative- or positive-photoconductivity, opening pathways towards engineering semiconductor nanowires for novel optical-memory and photodetector applications.

AB - We report on individual-InAs nanowire optoelectronic devices which, through surfacestate engineering, can be tailored to exhibit either negative- or positive-photoconductivity, opening pathways towards engineering semiconductor nanowires for novel optical-memory and photodetector applications.

UR - https://www.scopus.com/pages/publications/85020417447

U2 - 10.1364/CLEO_AT.2017.JTh2A.108

DO - 10.1364/CLEO_AT.2017.JTh2A.108

M3 - Conference Paper

AN - SCOPUS:85020417447

SN - 9781943580279

T3 - Optics InfoBase Conference Papers

BT - CLEO

PB - Optica Publishing Group

T2 - CLEO: Applications and Technology, CLEO_AT 2017

Y2 - 14 May 2017 through 19 May 2017

ER -

Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering

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