Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering

Xiaoming Yuan*, Philippe Caroff, Jennifer Wong-Leung, Lan Fu, Hark Hoe Tan, Chennupati Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    70 Citations (Scopus)

    Abstract

    Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111)A by atomically resolved scanning transmission electron microscopy.

    Original languageEnglish
    Pages (from-to)6096-6103
    Number of pages8
    JournalAdvanced Materials
    Volume27
    Issue number40
    DOIs
    Publication statusPublished - 1 Oct 2015

    Fingerprint

    Dive into the research topics of 'Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering'. Together they form a unique fingerprint.

    Cite this