Abstract
Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111)A by atomically resolved scanning transmission electron microscopy.
Original language | English |
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Pages (from-to) | 6096-6103 |
Number of pages | 8 |
Journal | Advanced Materials |
Volume | 27 |
Issue number | 40 |
DOIs | |
Publication status | Published - 1 Oct 2015 |