Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering

Xiaoming Yuan; Philippe Caroff; Jennifer Wong-Leung; Lan Fu; Hark Hoe Tan; Chennupati Jagadish

doi:10.1002/adma.201503540

Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering

Xiaoming Yuan^*, Philippe Caroff, Jennifer Wong-Leung, Lan Fu, Hark Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111)A by atomically resolved scanning transmission electron microscopy.

Original language	English
Pages (from-to)	6096-6103
Number of pages	8
Journal	Advanced Materials
Volume	27
Issue number	40
DOIs	https://doi.org/10.1002/adma.201503540
Publication status	Published - 1 Oct 2015

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abstract = "Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111)A by atomically resolved scanning transmission electron microscopy.",

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AU - Yuan, Xiaoming

AU - Caroff, Philippe

AU - Wong-Leung, Jennifer

AU - Fu, Lan

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2015/10/1

Y1 - 2015/10/1

N2 - Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111)A by atomically resolved scanning transmission electron microscopy.

AB - Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111)A by atomically resolved scanning transmission electron microscopy.

KW - GaAs

KW - growth mechanisms

KW - nanowires

KW - polarity

KW - surface energy

UR - https://www.scopus.com/pages/publications/84945447334

U2 - 10.1002/adma.201503540

DO - 10.1002/adma.201503540

M3 - Article

SN - 0935-9648

VL - 27

SP - 6096

EP - 6103

JO - Advanced Materials

JF - Advanced Materials

IS - 40

ER -

Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering

Abstract

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