Tuning the detection wavelength of quantum-well infrared photodetectors by single high-energy implantation

L. Fu; H. H. Tan; C. Jagadish; Na Li; Ning Li; Xingquan Liu; Wei Lu; S. C. Shen

doi:10.1063/1.1332984

Tuning the detection wavelength of quantum-well infrared photodetectors by single high-energy implantation

L. Fu^*, H. H. Tan, C. Jagadish, Na Li, Ning Li, Xingquan Liu, Wei Lu, S. C. Shen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Single high-energy (0.9 MeV) proton implantation and rapid thermal annealing was used to tune the spectral response of the quantum-well infrared photodetectors (QWIPs). In addition to the large redshift of the QWIPs' response wavelength after implantation, either narrowed or broadened spectrum was obtained at different interdiffusion extent. In general, the overall device performance for the low-dose implantation was not significantly degraded. In comparison with the other implantation schemes, this single high-energy implantation is the most effective and simple technique in tuning the wavelength of QWIPs, thus, to achieve the fabrication of multicolor detectors.

Original language	English
Pages (from-to)	10-12
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	1
DOIs	https://doi.org/10.1063/1.1332984
Publication status	Published - 1 Jan 2001

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abstract = "Single high-energy (0.9 MeV) proton implantation and rapid thermal annealing was used to tune the spectral response of the quantum-well infrared photodetectors (QWIPs). In addition to the large redshift of the QWIPs' response wavelength after implantation, either narrowed or broadened spectrum was obtained at different interdiffusion extent. In general, the overall device performance for the low-dose implantation was not significantly degraded. In comparison with the other implantation schemes, this single high-energy implantation is the most effective and simple technique in tuning the wavelength of QWIPs, thus, to achieve the fabrication of multicolor detectors.",

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AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Li, Na

AU - Li, Ning

AU - Liu, Xingquan

AU - Lu, Wei

AU - Shen, S. C.

PY - 2001/1/1

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N2 - Single high-energy (0.9 MeV) proton implantation and rapid thermal annealing was used to tune the spectral response of the quantum-well infrared photodetectors (QWIPs). In addition to the large redshift of the QWIPs' response wavelength after implantation, either narrowed or broadened spectrum was obtained at different interdiffusion extent. In general, the overall device performance for the low-dose implantation was not significantly degraded. In comparison with the other implantation schemes, this single high-energy implantation is the most effective and simple technique in tuning the wavelength of QWIPs, thus, to achieve the fabrication of multicolor detectors.

AB - Single high-energy (0.9 MeV) proton implantation and rapid thermal annealing was used to tune the spectral response of the quantum-well infrared photodetectors (QWIPs). In addition to the large redshift of the QWIPs' response wavelength after implantation, either narrowed or broadened spectrum was obtained at different interdiffusion extent. In general, the overall device performance for the low-dose implantation was not significantly degraded. In comparison with the other implantation schemes, this single high-energy implantation is the most effective and simple technique in tuning the wavelength of QWIPs, thus, to achieve the fabrication of multicolor detectors.

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JF - Applied Physics Letters

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ER -

Tuning the detection wavelength of quantum-well infrared photodetectors by single high-energy implantation

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