Tunnel junctions in a III–V nanowire by surface engineering

Salman Nadar; Chloé Rolland; Jean François Lampin; Xavier Wallart; Philippe Caroff; Renaud Leturcq

doi:10.1007/s12274-014-0579-8

Tunnel junctions in a III–V nanowire by surface engineering

Salman Nadar, Chloé Rolland, Jean François Lampin, Xavier Wallart, Philippe Caroff^*, Renaud Leturcq

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We demonstrate a simple way of fabricating high performance tunnel devices from p-doped InAs nanowires by tailoring the n-doped surface accumulation layer inherent to InAs surfaces. By using appropriate ammonium sulfide based surface passivation before metallization without any further thermal treatment, we demonstrate characteristics of tunnel p-n junctions, namely Esaki and backward diodes, with figures of merit better than previously published for InAs homojunctions. The further optimization of both the surface doping, in a quantitative way, and the device geometry allows us to demonstrate that these nanowire-based technologically-simple diodes have promising direct current characteristics for integrated high frequency detection or generation.

[Figure not available: see fulltext.]

Original language	English
Pages (from-to)	980-989
Number of pages	10
Journal	Nano Research
Volume	8
Issue number	3
DOIs	https://doi.org/10.1007/s12274-014-0579-8
Publication status	Published - Mar 2015

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title = "Tunnel junctions in a III–V nanowire by surface engineering",

abstract = "We demonstrate a simple way of fabricating high performance tunnel devices from p-doped InAs nanowires by tailoring the n-doped surface accumulation layer inherent to InAs surfaces. By using appropriate ammonium sulfide based surface passivation before metallization without any further thermal treatment, we demonstrate characteristics of tunnel p-n junctions, namely Esaki and backward diodes, with figures of merit better than previously published for InAs homojunctions. The further optimization of both the surface doping, in a quantitative way, and the device geometry allows us to demonstrate that these nanowire-based technologically-simple diodes have promising direct current characteristics for integrated high frequency detection or generation.[Figure not available: see fulltext.]",

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author = "Salman Nadar and Chlo{\'e} Rolland and Lampin, {Jean Fran{\c c}ois} and Xavier Wallart and Philippe Caroff and Renaud Leturcq",

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T1 - Tunnel junctions in a III–V nanowire by surface engineering

AU - Nadar, Salman

AU - Rolland, Chloé

AU - Lampin, Jean François

AU - Wallart, Xavier

AU - Caroff, Philippe

AU - Leturcq, Renaud

PY - 2015/3

Y1 - 2015/3

N2 - We demonstrate a simple way of fabricating high performance tunnel devices from p-doped InAs nanowires by tailoring the n-doped surface accumulation layer inherent to InAs surfaces. By using appropriate ammonium sulfide based surface passivation before metallization without any further thermal treatment, we demonstrate characteristics of tunnel p-n junctions, namely Esaki and backward diodes, with figures of merit better than previously published for InAs homojunctions. The further optimization of both the surface doping, in a quantitative way, and the device geometry allows us to demonstrate that these nanowire-based technologically-simple diodes have promising direct current characteristics for integrated high frequency detection or generation.[Figure not available: see fulltext.]

AB - We demonstrate a simple way of fabricating high performance tunnel devices from p-doped InAs nanowires by tailoring the n-doped surface accumulation layer inherent to InAs surfaces. By using appropriate ammonium sulfide based surface passivation before metallization without any further thermal treatment, we demonstrate characteristics of tunnel p-n junctions, namely Esaki and backward diodes, with figures of merit better than previously published for InAs homojunctions. The further optimization of both the surface doping, in a quantitative way, and the device geometry allows us to demonstrate that these nanowire-based technologically-simple diodes have promising direct current characteristics for integrated high frequency detection or generation.[Figure not available: see fulltext.]

KW - III-V semiconductors

KW - doping

KW - indium arsenide compounds

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JO - Nano Research

JF - Nano Research

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Tunnel junctions in a III–V nanowire by surface engineering

Abstract

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