Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System

María De La Mata, Renaud Leturcq*, Sébastien R. Plissard, Chloé Rolland, César Magén, Jordi Arbiol, Philippe Caroff

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    75 Citations (Scopus)

    Abstract

    Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12 000 cm2·V-1·s-1. Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.

    Original languageEnglish
    Pages (from-to)825-833
    Number of pages9
    JournalNano Letters
    Volume16
    Issue number2
    DOIs
    Publication statusPublished - 10 Feb 2016

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