Two-color InGaAsGaAs quantum dot infrared photodetectors by selective area interdiffusion

L. Fu; Q. Li; P. Kuffner; G. Jolley; P. Gareso; H. H. Tan; C. Jagadish

doi:10.1063/1.2955517

Two-color InGaAsGaAs quantum dot infrared photodetectors by selective area interdiffusion

L. Fu^*, Q. Li, P. Kuffner, G. Jolley, P. Gareso, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We report the postgrowth fabrication of two-color InGaAsGaAs quantum dot infrared photodetectors (QDIPs). By capping half of the as-grown QDIP structure with titanium dioxide (Ti O2) and performing rapid thermal annealing under the optimized condition, a blueshifted photoluminescence from the uncapped region was obtained compared with the Ti O2 covered region. The corresponding device spectral photoresponse from the two adjacent regions exhibited a shift of 0.8 μm around the wavelength of 6 μm. This is a result of the simultaneous promotion and suppression of thermal interdiffusion during rapid thermal annealing.

Original language	English
Article number	013504
Journal	Applied Physics Letters
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.2955517
Publication status	Published - 2008

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@article{f7733e5036b149c89bd7fa6efd11d8e6,

title = "Two-color InGaAsGaAs quantum dot infrared photodetectors by selective area interdiffusion",

abstract = "We report the postgrowth fabrication of two-color InGaAsGaAs quantum dot infrared photodetectors (QDIPs). By capping half of the as-grown QDIP structure with titanium dioxide (Ti O2) and performing rapid thermal annealing under the optimized condition, a blueshifted photoluminescence from the uncapped region was obtained compared with the Ti O2 covered region. The corresponding device spectral photoresponse from the two adjacent regions exhibited a shift of 0.8 μm around the wavelength of 6 μm. This is a result of the simultaneous promotion and suppression of thermal interdiffusion during rapid thermal annealing.",

author = "L. Fu and Q. Li and P. Kuffner and G. Jolley and P. Gareso and Tan, {H. H.} and C. Jagadish",

year = "2008",

doi = "10.1063/1.2955517",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Two-color InGaAsGaAs quantum dot infrared photodetectors by selective area interdiffusion

AU - Fu, L.

AU - Li, Q.

AU - Kuffner, P.

AU - Jolley, G.

AU - Gareso, P.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2008

Y1 - 2008

N2 - We report the postgrowth fabrication of two-color InGaAsGaAs quantum dot infrared photodetectors (QDIPs). By capping half of the as-grown QDIP structure with titanium dioxide (Ti O2) and performing rapid thermal annealing under the optimized condition, a blueshifted photoluminescence from the uncapped region was obtained compared with the Ti O2 covered region. The corresponding device spectral photoresponse from the two adjacent regions exhibited a shift of 0.8 μm around the wavelength of 6 μm. This is a result of the simultaneous promotion and suppression of thermal interdiffusion during rapid thermal annealing.

AB - We report the postgrowth fabrication of two-color InGaAsGaAs quantum dot infrared photodetectors (QDIPs). By capping half of the as-grown QDIP structure with titanium dioxide (Ti O2) and performing rapid thermal annealing under the optimized condition, a blueshifted photoluminescence from the uncapped region was obtained compared with the Ti O2 covered region. The corresponding device spectral photoresponse from the two adjacent regions exhibited a shift of 0.8 μm around the wavelength of 6 μm. This is a result of the simultaneous promotion and suppression of thermal interdiffusion during rapid thermal annealing.

UR - http://www.scopus.com/inward/record.url?scp=47249087253&partnerID=8YFLogxK

U2 - 10.1063/1.2955517

DO - 10.1063/1.2955517

M3 - Article

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 013504

ER -

Two-color InGaAsGaAs quantum dot infrared photodetectors by selective area interdiffusion

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