TY - JOUR
T1 - Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems
AU - Wei, X. F.
AU - Xu, W.
AU - Zhang, J.
AU - Zeng, Z.
AU - Zhang, C.
PY - 2008/3
Y1 - 2008/3
N2 - We examine theoretically the contribution from different transition channels to optical absorption in an InAs/GaSb-based type II and broken-gap quantum well in which both electron and hole subbands in different layers are occupied by carriers. We find that in such a system, due to a weak overlap of the electron and hole wavefunction at the interface, optical absorption is mainly achieved via inter-subband transition within the same material layer. As a result, two sharp absorption peaks can be observed and the intensity of this two-colour absorption depends rather weakly on temperature up to room-temperature.
AB - We examine theoretically the contribution from different transition channels to optical absorption in an InAs/GaSb-based type II and broken-gap quantum well in which both electron and hole subbands in different layers are occupied by carriers. We find that in such a system, due to a weak overlap of the electron and hole wavefunction at the interface, optical absorption is mainly achieved via inter-subband transition within the same material layer. As a result, two sharp absorption peaks can be observed and the intensity of this two-colour absorption depends rather weakly on temperature up to room-temperature.
KW - InAs/GaSb heterostructure
KW - Two-colour infrared absorption
KW - Type II quantum well
UR - http://www.scopus.com/inward/record.url?scp=39649114578&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2007.08.004
DO - 10.1016/j.physe.2007.08.004
M3 - Article
SN - 1386-9477
VL - 40
SP - 1069
EP - 1071
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 5
ER -