Two-dimensional electron gas related emissions in ZnMgO/ZnO heterostructures

Hui Chen; Shulin Gu; Jiagao Liu; Jiandong Ye; Kun Tang; Shunming Zhu; Youdou Zheng

doi:10.1063/1.3662964

Two-dimensional electron gas related emissions in ZnMgO/ZnO heterostructures

Hui Chen^*, Shulin Gu, Jiagao Liu, Jiandong Ye, Kun Tang, Shunming Zhu, Youdou Zheng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Radiative recombination of two-dimensional electron gas (2DEG), induced by polarization and validated by Hall effect measurements, is investigated in ZnMgO/ZnO heterostructures grown by metal-organic chemical vapor deposition. The Mg composition, the depth profile distribution of Mg, the residual strain in ZnMgO caplayer, and the thickness of caplayer all significantly influence the 2DEG-related transitions in ZnMgO/ZnO heterostructures. Below or above ZnO donor bound exciton, three additional broad emissions persisting up to 100 K are assigned to the spatially indirect transitions from 2DEG electrons to the photoexcited holes towards the ZnO flat-band region or remaining at the heterointerface.

Original language	English
Article number	211906
Journal	Applied Physics Letters
Volume	99
Issue number	21
DOIs	https://doi.org/10.1063/1.3662964
Publication status	Published - 21 Nov 2011

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abstract = "Radiative recombination of two-dimensional electron gas (2DEG), induced by polarization and validated by Hall effect measurements, is investigated in ZnMgO/ZnO heterostructures grown by metal-organic chemical vapor deposition. The Mg composition, the depth profile distribution of Mg, the residual strain in ZnMgO caplayer, and the thickness of caplayer all significantly influence the 2DEG-related transitions in ZnMgO/ZnO heterostructures. Below or above ZnO donor bound exciton, three additional broad emissions persisting up to 100 K are assigned to the spatially indirect transitions from 2DEG electrons to the photoexcited holes towards the ZnO flat-band region or remaining at the heterointerface.",

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T1 - Two-dimensional electron gas related emissions in ZnMgO/ZnO heterostructures

AU - Chen, Hui

AU - Gu, Shulin

AU - Liu, Jiagao

AU - Ye, Jiandong

AU - Tang, Kun

AU - Zhu, Shunming

AU - Zheng, Youdou

PY - 2011/11/21

Y1 - 2011/11/21

N2 - Radiative recombination of two-dimensional electron gas (2DEG), induced by polarization and validated by Hall effect measurements, is investigated in ZnMgO/ZnO heterostructures grown by metal-organic chemical vapor deposition. The Mg composition, the depth profile distribution of Mg, the residual strain in ZnMgO caplayer, and the thickness of caplayer all significantly influence the 2DEG-related transitions in ZnMgO/ZnO heterostructures. Below or above ZnO donor bound exciton, three additional broad emissions persisting up to 100 K are assigned to the spatially indirect transitions from 2DEG electrons to the photoexcited holes towards the ZnO flat-band region or remaining at the heterointerface.

AB - Radiative recombination of two-dimensional electron gas (2DEG), induced by polarization and validated by Hall effect measurements, is investigated in ZnMgO/ZnO heterostructures grown by metal-organic chemical vapor deposition. The Mg composition, the depth profile distribution of Mg, the residual strain in ZnMgO caplayer, and the thickness of caplayer all significantly influence the 2DEG-related transitions in ZnMgO/ZnO heterostructures. Below or above ZnO donor bound exciton, three additional broad emissions persisting up to 100 K are assigned to the spatially indirect transitions from 2DEG electrons to the photoexcited holes towards the ZnO flat-band region or remaining at the heterointerface.

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VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

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ER -

Two-dimensional electron gas related emissions in ZnMgO/ZnO heterostructures

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