Type i band alignment in GaAs81Sb19/GaAs core-shell nanowires

T. Xu; M. J. Wei; P. Capiod; A. Díaz Álvarez; X. L. Han; D. Troadec; J. P. Nys; M. Berthe; I. Lefebvre; G. Patriarche; S. R. Plissard; P. Caroff; Ph Ebert; B. Grandidier

doi:10.1063/1.4930991

Type i band alignment in GaAs₈₁Sb₁₉/GaAs core-shell nanowires

T. Xu, M. J. Wei, P. Capiod, A. Díaz Álvarez, X. L. Han, D. Troadec, J. P. Nys, M. Berthe, I. Lefebvre, G. Patriarche, S. R. Plissard, P. Caroff, Ph Ebert, B. Grandidier

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15 Citations (Scopus)

Abstract

The composition and band gap of the shell that formed during the growth of axial GaAs/GaAs₈₁Sb₁₉/ GaAs heterostructure nanowires have been investigated by transmission electron microscopy combined with energy dispersion spectroscopy, scanning tunneling spectroscopy, and density functional theory calculations. On the GaAs₈₁Sb₁₉ intermediate segment, the shell is found to be free of Sb (pure GaAs shell) and transparent to the tunneling electrons, despite the (110) biaxial strain that affects its band gap. As a result, a direct measurement of the core band gap allows the quantitative determination of the band offset between the GaAs₈₁Sb₁₉ core and the GaAs shell and identifies it as a type I band alignment.

Original language	English
Article number	112102
Journal	Applied Physics Letters
Volume	107
Issue number	11
DOIs	https://doi.org/10.1063/1.4930991
Publication status	Published - 14 Sept 2015

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title = "Type i band alignment in GaAs81Sb19/GaAs core-shell nanowires",

abstract = "The composition and band gap of the shell that formed during the growth of axial GaAs/GaAs81Sb19/ GaAs heterostructure nanowires have been investigated by transmission electron microscopy combined with energy dispersion spectroscopy, scanning tunneling spectroscopy, and density functional theory calculations. On the GaAs81Sb19 intermediate segment, the shell is found to be free of Sb (pure GaAs shell) and transparent to the tunneling electrons, despite the (110) biaxial strain that affects its band gap. As a result, a direct measurement of the core band gap allows the quantitative determination of the band offset between the GaAs81Sb19 core and the GaAs shell and identifies it as a type I band alignment.",

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doi = "10.1063/1.4930991",

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volume = "107",

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T1 - Type i band alignment in GaAs81Sb19/GaAs core-shell nanowires

AU - Xu, T.

AU - Wei, M. J.

AU - Capiod, P.

AU - Díaz Álvarez, A.

AU - Han, X. L.

AU - Troadec, D.

AU - Nys, J. P.

AU - Berthe, M.

AU - Lefebvre, I.

AU - Patriarche, G.

AU - Plissard, S. R.

AU - Caroff, P.

AU - Ebert, Ph

AU - Grandidier, B.

PY - 2015/9/14

Y1 - 2015/9/14

N2 - The composition and band gap of the shell that formed during the growth of axial GaAs/GaAs81Sb19/ GaAs heterostructure nanowires have been investigated by transmission electron microscopy combined with energy dispersion spectroscopy, scanning tunneling spectroscopy, and density functional theory calculations. On the GaAs81Sb19 intermediate segment, the shell is found to be free of Sb (pure GaAs shell) and transparent to the tunneling electrons, despite the (110) biaxial strain that affects its band gap. As a result, a direct measurement of the core band gap allows the quantitative determination of the band offset between the GaAs81Sb19 core and the GaAs shell and identifies it as a type I band alignment.

AB - The composition and band gap of the shell that formed during the growth of axial GaAs/GaAs81Sb19/ GaAs heterostructure nanowires have been investigated by transmission electron microscopy combined with energy dispersion spectroscopy, scanning tunneling spectroscopy, and density functional theory calculations. On the GaAs81Sb19 intermediate segment, the shell is found to be free of Sb (pure GaAs shell) and transparent to the tunneling electrons, despite the (110) biaxial strain that affects its band gap. As a result, a direct measurement of the core band gap allows the quantitative determination of the band offset between the GaAs81Sb19 core and the GaAs shell and identifies it as a type I band alignment.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Type i band alignment in GaAs₈₁Sb₁₉/GaAs core-shell nanowires

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