TY - GEN
T1 - Ultra-Deep Multi-Notch Microwave Photonic Filter utilising On-Chip Brillouin processing and Microring Resonators
AU - Garrett, Matthew
AU - Liu, Yang
AU - Choi, Duk Yong
AU - Yan, Kunlun
AU - Madden, Stephen J.
AU - Eggleton, Benjamin J.
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/6
Y1 - 2021/6
N2 - Microwave notch filters that exhibit wideband transmission and widely tunable notches are desirable, but difficult to implement using modern radio frequency (RF) electronics [1] , [2]. Microwave photonic (MWP) notch filters that utilise on-chip stimulated Brillouin scattering (SBS) [3] are particularly attractive, as they are uniquely capable of delivering notches with fine frequency selectivity. Recently, an RF notch filter with deep rejection was demonstrated by aligning an over-coupled ring resonator with Brillouin gain to generate spectrally localised RF destructive interference [4]. The optical response was tailored to provide unity gain and a π phase shift at a point on one sideband, while leaving the other sideband unchanged. The key advantage of this approach is that destructive interference of the RF output only occurs at specific frequencies, causing ultra-deep notch formation. Since the π phase shift is localised it allows intensity modulation (IM) to be used, increasing the RF passband gain as the upper and lower sidebands are in phase. Although deep RF notches were achieved, previous demonstrations that used single on-chip resonators were constrained to a single notch [4] - [6] , exhibited wide 3-dB notch bandwidths of several GHz [4] and required specific modulator bias [5] , [6] or heater voltages [7] to form destructive interference.
AB - Microwave notch filters that exhibit wideband transmission and widely tunable notches are desirable, but difficult to implement using modern radio frequency (RF) electronics [1] , [2]. Microwave photonic (MWP) notch filters that utilise on-chip stimulated Brillouin scattering (SBS) [3] are particularly attractive, as they are uniquely capable of delivering notches with fine frequency selectivity. Recently, an RF notch filter with deep rejection was demonstrated by aligning an over-coupled ring resonator with Brillouin gain to generate spectrally localised RF destructive interference [4]. The optical response was tailored to provide unity gain and a π phase shift at a point on one sideband, while leaving the other sideband unchanged. The key advantage of this approach is that destructive interference of the RF output only occurs at specific frequencies, causing ultra-deep notch formation. Since the π phase shift is localised it allows intensity modulation (IM) to be used, increasing the RF passband gain as the upper and lower sidebands are in phase. Although deep RF notches were achieved, previous demonstrations that used single on-chip resonators were constrained to a single notch [4] - [6] , exhibited wide 3-dB notch bandwidths of several GHz [4] and required specific modulator bias [5] , [6] or heater voltages [7] to form destructive interference.
UR - http://www.scopus.com/inward/record.url?scp=85117570776&partnerID=8YFLogxK
U2 - 10.1109/CLEO/Europe-EQEC52157.2021.9542444
DO - 10.1109/CLEO/Europe-EQEC52157.2021.9542444
M3 - Conference contribution
AN - SCOPUS:85117570776
T3 - 2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2021
BT - 2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2021
Y2 - 21 June 2021 through 25 June 2021
ER -