TY - GEN
T1 - Ultra-Fast High-Contrast Optical Modulation in Si Metasurfaces
AU - Trifonov, Anton A.
AU - Kamali, Khosro Zangeneh
AU - Georgiev, Kaloyan
AU - Xu, Lei
AU - Crotti, Giulia
AU - Leon, Unai Arregui
AU - Rahmani, Mohsen
AU - Della Valle, Giuseppe
AU - Buchvarov, Ivan
AU - Neshev, Dragomir
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Ultra-fast modulation of dielectric metasurfaces has shown a great promise for novel optical switching [1] and wavelength conversion [2]. A number of mechanisms have been recently explored, however the overall transmission modulation in such all-optical processes has remained low, typically a few percents. To increase the modulation contrast, high-quality factor metasurfaces manufactured on stable materials are required. Here, we demonstrate a high-contrast transmission modulation metasurface with ultra-fast response. In our metasurface design, the interference of the non-radiative asymmetric bound-state in the continuum (BIC) channel and a radiative electric dipole form a kink-type transmission response. Based on this engineered response, we demonstrate absolute transmission modulation of over 25% with a few tens of picoseconds time-response, driven by carrier injection in the crystalline silicon metasurface.
AB - Ultra-fast modulation of dielectric metasurfaces has shown a great promise for novel optical switching [1] and wavelength conversion [2]. A number of mechanisms have been recently explored, however the overall transmission modulation in such all-optical processes has remained low, typically a few percents. To increase the modulation contrast, high-quality factor metasurfaces manufactured on stable materials are required. Here, we demonstrate a high-contrast transmission modulation metasurface with ultra-fast response. In our metasurface design, the interference of the non-radiative asymmetric bound-state in the continuum (BIC) channel and a radiative electric dipole form a kink-type transmission response. Based on this engineered response, we demonstrate absolute transmission modulation of over 25% with a few tens of picoseconds time-response, driven by carrier injection in the crystalline silicon metasurface.
UR - http://www.scopus.com/inward/record.url?scp=85175721028&partnerID=8YFLogxK
U2 - 10.1109/CLEO/EUROPE-EQEC57999.2023.10231379
DO - 10.1109/CLEO/EUROPE-EQEC57999.2023.10231379
M3 - Conference contribution
T3 - 2023 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2023
BT - 2023 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2023
Y2 - 26 June 2023 through 30 June 2023
ER -