Ultrafast carrier trapping and recombination in highly resistive ion implanted InP

C. Carmody; H. H. Tan; C. Jagadish; A. Gaarder; S. Marcinkevičius

doi:10.1063/1.1576516

Ultrafast carrier trapping and recombination in highly resistive ion implanted InP

C. Carmody^*, H. H. Tan, C. Jagadish, A. Gaarder, S. Marcinkevičius

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Ultrafast carrier trapping and recombination in highly resistive ion implanted InP were investigated. The electrical and optical features were analyzed by using Hall effect measurements and time resolved photoluminescence. Results showed that low temperature annealing yielded the fastest response times.

Original language	English
Pages (from-to)	1074-1078
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	2
DOIs	https://doi.org/10.1063/1.1576516
Publication status	Published - 15 Jul 2003

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title = "Ultrafast carrier trapping and recombination in highly resistive ion implanted InP",

abstract = "Ultrafast carrier trapping and recombination in highly resistive ion implanted InP were investigated. The electrical and optical features were analyzed by using Hall effect measurements and time resolved photoluminescence. Results showed that low temperature annealing yielded the fastest response times.",

author = "C. Carmody and Tan, {H. H.} and C. Jagadish and A. Gaarder and S. Marcinkevi{\v c}ius",

year = "2003",

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T1 - Ultrafast carrier trapping and recombination in highly resistive ion implanted InP

AU - Carmody, C.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Gaarder, A.

AU - Marcinkevičius, S.

PY - 2003/7/15

Y1 - 2003/7/15

N2 - Ultrafast carrier trapping and recombination in highly resistive ion implanted InP were investigated. The electrical and optical features were analyzed by using Hall effect measurements and time resolved photoluminescence. Results showed that low temperature annealing yielded the fastest response times.

AB - Ultrafast carrier trapping and recombination in highly resistive ion implanted InP were investigated. The electrical and optical features were analyzed by using Hall effect measurements and time resolved photoluminescence. Results showed that low temperature annealing yielded the fastest response times.

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U2 - 10.1063/1.1576516

DO - 10.1063/1.1576516

M3 - Article

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VL - 94

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Ultrafast carrier trapping and recombination in highly resistive ion implanted InP

Abstract

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