Ultrafast dynamics in ZnO/ZnMgO multiple quantum wells

X. M. Wen; J. A. Davis; D. McDonald; L. V. Dao; P. Hannaford; V. A. Coleman; H. H. Tan; C. Jagadish; K. Koike; S. Sasa; M. Inoue; M. Yano

doi:10.1088/0957-4484/18/31/315403

Ultrafast dynamics in ZnO/ZnMgO multiple quantum wells

X. M. Wen^*, J. A. Davis, D. McDonald, L. V. Dao, P. Hannaford, V. A. Coleman, H. H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, M. Yano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We have investigated carrier relaxation and exciton recombination dynamics in ZnO/ZnMgO multiple quantum wells using femtosecond pump-probe techniques at room temperature. For a probe energy above the band gap, the hot carriers exhibit an effective relaxation by longitudinal optical phonon scattering with a cooling time of 700-850 fs. By detecting the emission near the band-gap, a longer decay time of a few picoseconds was observed which is attributed to acoustic phonon scattering. As the probe energy is decreased further, the decay time continues to increase due to the transitions of exciton recombination or localized carrier recombination.

Original language	English
Article number	315403
Journal	Nanotechnology
Volume	18
Issue number	31
DOIs	https://doi.org/10.1088/0957-4484/18/31/315403
Publication status	Published - 8 Aug 2007

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title = "Ultrafast dynamics in ZnO/ZnMgO multiple quantum wells",

abstract = "We have investigated carrier relaxation and exciton recombination dynamics in ZnO/ZnMgO multiple quantum wells using femtosecond pump-probe techniques at room temperature. For a probe energy above the band gap, the hot carriers exhibit an effective relaxation by longitudinal optical phonon scattering with a cooling time of 700-850 fs. By detecting the emission near the band-gap, a longer decay time of a few picoseconds was observed which is attributed to acoustic phonon scattering. As the probe energy is decreased further, the decay time continues to increase due to the transitions of exciton recombination or localized carrier recombination.",

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AU - Wen, X. M.

AU - Davis, J. A.

AU - McDonald, D.

AU - Dao, L. V.

AU - Hannaford, P.

AU - Coleman, V. A.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Koike, K.

AU - Sasa, S.

AU - Inoue, M.

AU - Yano, M.

PY - 2007/8/8

Y1 - 2007/8/8

N2 - We have investigated carrier relaxation and exciton recombination dynamics in ZnO/ZnMgO multiple quantum wells using femtosecond pump-probe techniques at room temperature. For a probe energy above the band gap, the hot carriers exhibit an effective relaxation by longitudinal optical phonon scattering with a cooling time of 700-850 fs. By detecting the emission near the band-gap, a longer decay time of a few picoseconds was observed which is attributed to acoustic phonon scattering. As the probe energy is decreased further, the decay time continues to increase due to the transitions of exciton recombination or localized carrier recombination.

AB - We have investigated carrier relaxation and exciton recombination dynamics in ZnO/ZnMgO multiple quantum wells using femtosecond pump-probe techniques at room temperature. For a probe energy above the band gap, the hot carriers exhibit an effective relaxation by longitudinal optical phonon scattering with a cooling time of 700-850 fs. By detecting the emission near the band-gap, a longer decay time of a few picoseconds was observed which is attributed to acoustic phonon scattering. As the probe energy is decreased further, the decay time continues to increase due to the transitions of exciton recombination or localized carrier recombination.

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DO - 10.1088/0957-4484/18/31/315403

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SN - 0957-4484

VL - 18

JO - Nanotechnology

JF - Nanotechnology

IS - 31

M1 - 315403

ER -

Ultrafast dynamics in ZnO/ZnMgO multiple quantum wells

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