Ultrafast trapping times in ion implanted InP

C. Carmody; H. Boudinov; H. H. Tan; C. Jagadish; M. J. Lederer; V. Kolev; B. Luther-Davies; L. V. Dao; M. Gal

doi:10.1063/1.1493651

Ultrafast trapping times in ion implanted InP

C. Carmody^*, H. Boudinov, H. H. Tan, C. Jagadish, M. J. Lederer, V. Kolev, B. Luther-Davies, L. V. Dao, M. Gal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

As ⁺ and P ⁺ implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1×10 ¹⁶cm ^-2 and p-type InP was implanted with doses between 1×10 ¹² and 1×10 ¹⁶cm ^-2. Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity.

Original language	English
Pages (from-to)	2420-2423
Number of pages	4
Journal	Journal of Applied Physics
Volume	92
Issue number	5
DOIs	https://doi.org/10.1063/1.1493651
Publication status	Published - 1 Sept 2002

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@article{333776a8b3804b0081bca82b8e27f213,

title = "Ultrafast trapping times in ion implanted InP",

abstract = "As + and P + implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1×10 16cm -2 and p-type InP was implanted with doses between 1×10 12 and 1×10 16cm -2. Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity.",

author = "C. Carmody and H. Boudinov and Tan, \{H. H.\} and C. Jagadish and Lederer, \{M. J.\} and V. Kolev and B. Luther-Davies and Dao, \{L. V.\} and M. Gal",

year = "2002",

month = sep,

day = "1",

doi = "10.1063/1.1493651",

language = "English",

volume = "92",

pages = "2420--2423",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Ultrafast trapping times in ion implanted InP

AU - Carmody, C.

AU - Boudinov, H.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Lederer, M. J.

AU - Kolev, V.

AU - Luther-Davies, B.

AU - Dao, L. V.

AU - Gal, M.

PY - 2002/9/1

Y1 - 2002/9/1

N2 - As + and P + implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1×10 16cm -2 and p-type InP was implanted with doses between 1×10 12 and 1×10 16cm -2. Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity.

AB - As + and P + implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1×10 16cm -2 and p-type InP was implanted with doses between 1×10 12 and 1×10 16cm -2. Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity.

UR - https://www.scopus.com/pages/publications/0036732172

U2 - 10.1063/1.1493651

DO - 10.1063/1.1493651

M3 - Article

SN - 0021-8979

VL - 92

SP - 2420

EP - 2423

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Ultrafast trapping times in ion implanted InP

Abstract

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